Portland, OR, United States of America

Anand S Murthy

This inventor holds 396 USPTO granted patents and 240 published patent applications and 35 EPO patents, primarily in Integrated Circuit Technology (CPC class H01L29-785). Top assignees: Intel Corporation, Daedalus Prime LLC, Sony Group Corporation. Active years: 2001-2026.

USPTO Granted Patents = 396 

% Patents Active = 85.1

 

Average Co-Inventor Count = 4.9

ph-index = 30

Forward Citations = 4,330(Granted Patents)

Forward Citations (Not Self Cited) = 3,426(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Beaverton, OR (US) (2001 - 2008)
  • Portland, OR (US) (2003 - 2024)

Company Filing History:


Years Active: 2001-2026

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Areas of Expertise:
Stacked SRAM
Integrated Circuit Structures
Memory Devices
Vertical Transistors
Low Temperature Computation
Epitaxial Structures
SiGe
High Voltage Transistors
PMOS Contact Resistivity
Hybrid Switching Mechanism
Angled Transistors
Photonic Systems
396 patents (USPTO):Explore Patents

Title: Anand S Murthy: Pioneering Innovator in Transistor Technology

Introduction:

Anand S Murthy, a highly accomplished inventor and engineer based in Portland, Oregon, has made significant contributions to the field of transistor technology. With a strong focus on developing cutting-edge semiconductor devices, Murthy has amassed an impressive portfolio of 280 patents. This article explores his latest patents, career highlights, notable collaborations, and the impact of his innovations.

Latest Patents:

Murthy's recent patents showcase his expertise in enhancing transistor performance and functionality. One of his notable inventions is the "Indium-containing fin of a transistor device with an indium-rich core." This apparatus incorporates indium into the channel material, facilitating changes in indium atom diffusivity away from the sidewalls. By optimizing indium distribution, this innovation enhances the performance of transistor devices by promoting efficient charge transport.

Another commendable patent by Murthy is the "Epitaxial oxide plug for strained transistors." This invention involves the use of epitaxial oxide plugs to selectively exert strain on the channel region of a transistor. By precisely controlling strain levels, Murthy's invention enables improved device performance and empowers semiconductor manufacturers to fine-tune strain in various transistor configurations.

Career Highlights:

During his career, Anand S Murthy has held key positions at renowned technology companies such as Intel Corporation and Daedalus Prime LLC. His work at these organizations has played a pivotal role in advancing the development of semiconductor technologies. In his role at Intel Corporation, Murthy's contributions were instrumental in driving innovation in transistor design and fabrication, contributing to the company's technological leadership in the industry.

Collaborations:

Anand S Murthy has collaborated with several esteemed individuals in the field of semiconductor technology. Notably, he has worked alongside Tahir Ghani, a recognized expert in transistor technology, and Glenn A Glass, a renowned inventor and engineer. These collaborations have proven fruitful, fostering a conducive environment for knowledge exchange and groundbreaking research.

Conclusion:

Anand S Murthy's vast patent portfolio and remarkable contributions to transistor technology position him as a frontrunner in the field. His latest inventions, including the indium-containing fin and epitaxial oxide plug technologies, demonstrate his ability to push the boundaries of semiconductor devices. As a key member of prominent technology companies and through fruitful collaborations with industry experts, Murthy continues to inspire innovation and shape the future of transistor technology.

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