Tahir Ghani

Portland, OR, United States of America

Tahir Ghani

USPTO Granted Patents = 496 

 

Average Co-Inventor Count = 5.6

ph-index = 25

Forward Citations = 2,773(Granted Patents)

Forward Citations (Not Self Cited) = 2,379(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Beaverton, OR (US) (1998 - 2007)
  • Hillsboro, OR (US) (2014 - 2015)
  • Protland, OR (US) (2023)
  • Portland, OR (US) (2003 - 2024)

Company Filing History:


Years Active: 1998-2025

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Areas of Expertise:
Integrated Circuits
Gate-All-Around Structures
Transistor Fabrication
Epitaxial Growth
Silicon Germanium Contacts
Extreme Ultraviolet Lithography
Nanowire Devices
High Mobility Transistors
Dielectric Layers
Source/Drain Structures
Vertical Integration
Channel Stability
496 patents (USPTO):Explore Patents

Title: Tahir Ghani: An Innovative Mind Driving Technological Advancements

Introduction:

Tahir Ghani, based in Portland, OR, is an inventive genius and a seasoned expert in the field of integrated circuit structures. With an astounding number of 366 patents under his belt, Ghani has played a significant role in the development and advancement of nanowire-based technologies. This article will delve into Ghani's latest patents, highlight his career achievements, explore his collaborations, and showcase the immense impact he has had on the industry.

Latest Patents:

Ghani's latest patents demonstrate his expertise in gate-all-around integrated circuit structures and thin film transistors with double gates. In the first patent, "Gate-all-around integrated circuit structures having nanowires with tight vertical spacing," Ghani describes a groundbreaking integrated circuit structure. This structure consists of a vertical arrangement of horizontal silicon nanowires with less than 6 nanometers of vertical spacing between them. Additionally, a gate stack surrounds the vertical nanowire arrangement, enhancing the overall performance of the integrated circuit structure.

In his second patent, "Thin film transistors having double gates," Ghani introduces an integrated circuit structure that incorporates a unique insulator layer, multiple gate stacks, and polycrystalline channel material. These innovations ensure the efficient operation of the transistor and contribute to improved device performance.

Career Highlights:

Throughout his illustrious career, Tahir Ghani has been associated with industry giants, including Intel Corporation and Sony Corporation. At Intel Corporation, Ghani contributed extensively to cutting-edge advancements in the field of integrated circuit technology. His work has helped shape the landscape of modern electronics, driving innovation forward and enhancing the processing power of various devices. Likewise, during his tenure at Sony Corporation, Ghani played a pivotal role in developing groundbreaking technologies, contributing to the company's success in the highly competitive consumer electronics market.

Collaborations:

Ghani has worked closely with exceptional individuals in his field, fostering meaningful collaborations. Notably, his collaboration with Anand S Murthy has yielded several breakthroughs in the realm of integrated circuits, further cementing Ghani's reputation as a sought-after expert. Moreover, his collaboration with Jack T Kavalieros has resulted in remarkable advancements, challenging conventional notions and pushing the boundaries of technological possibilities.

Conclusion:

Tahir Ghani's impressive array of patents and career highlights showcase his immense contributions to the world of integrated circuit structures. His innovative mindset and remarkable expertise have paved the way for significant advancements in nanowire-based technologies. Collaborating with renowned industry leaders, Ghani's work continues to shape the future of electronics, enhancing device performance and revolutionizing the field. As an inventive force, Tahir Ghani's impact will be felt for years to come, driving further innovation and opening new avenues for technological progress.

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