The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jun. 04, 2021
Intel Corporation, Santa Clara, CA (US);
Leonard P. Guler, Hillsboro, OR (US);
Mohammad Hasan, Aloha, OR (US);
William Hsu, Portland, OR (US);
Biswajeet Guha, Hillsboro, OR (US);
Charles H. Wallace, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Sean Pursel, Hillsboro, OR (US);
Tsuan-Chung Chang, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Gate aligned fin cut for advanced integrated circuit structure fabrication is described. For example, an integrated circuit structure includes a first fin segment having a fin end, and a second fin segment spaced apart from the first fin segment, the second fin segment having a fin end facing the fin end of the first fin segment. A first gate structure is over the first fin segment, the first gate structure substantially vertically aligned with the fin end of the first fin segment. A second gate structure is over the second fin segment, the second gate structure substantially vertically aligned with the fin end of the second fin segment. An isolation structure is laterally between the fin end of the first fin segment and the fin end of the second fin segment.