logo

For the Inventor, By the Inventor

Hillsboro, OR, United States of America

William Hsu

This inventor holds 46 USPTO granted patents and 14 published patent applications and 1 EPO patent, primarily in Integrated Circuit Structures. Top assignee: Intel Corporation. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William Hsu. Retrieved from https://idiyas.com/inventor/william-hsu-7yp4ac81

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 46 

% Patents Active = 100.0

 

Average Co-Inventor Count = 6.6

ph-index = 3

Forward Citations = 32(Granted Patents)


Location History:

  • Portland, OR (US) (2023)
  • Hillsboro, OR (US) (2021 - 2024)

Company Filing History:

goldMedal46 out of 56,322 
 
Intel Corporation
 patents

Years Active: 2021-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Gate-All-Around
Integrated Circuit
Nanowire Transistor
Sub-Fin Isolation
Self-Aligned Gate
Dielectric Isolation
Fabrication Techniques
Cavity Spacer
Non-Planar Structures
Source/Drain Contact
Channel Material
Fin Shaping
46 patents (USPTO):Explore Patents
1. 12751074 - Source and drain regions for laterally adjacent gate-all-around (GAA) PMOS and NMOS (2026-09-29),
2. 12745416 - Gate-all-around integrated circuit structures having fin stack isolation (2026-09-22),
3. 12720787 - Transistor comprising a uniform stack of channel material layers (2026-08-25),
4. 12575151 - Gate-all-around integrated circuit structures having doped subfin (2026-03-10),
5. 12563779 - Gate-all-around integrated structures having gate height reduction and dielectric capping material with shoulder portions inside gate stack (2026-02-24),
6. 12507464 - Gate aligned fin cut for advanced integrated circuit structure fabrication (2025-12-23),
7. 12453115 - Nanowire transistor structure and method of shaping (2025-10-21),
8. 12402349 - Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact (2025-08-26),
9. 12382706 - Self-aligned gate endcap (SAGE) architectures with gate-all-around devices (2025-08-05),
10. 12369392 - Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gates (2025-07-22),
11. 12349394 - Dielectric isolation layer between a nanowire transistor and a substrate (2025-07-01),
12. 12328920 - Nanoribbon sub-fin isolation by backside Si substrate removal etch selective to source and drain epitaxy (2025-06-10),
13. 12328905 - Cavity spacer for nanowire transistors (2025-06-10),
14. 12302632 - Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process (2025-05-13),
15. 12294006 - Gate-all-around integrated circuit structures having insulator substrate (2025-05-06),

Title: Innovations in Integrated Circuit Structures by William Hsu

Introduction

William Hsu is a prominent inventor based in Hillsboro, Oregon, specializing in advanced semiconductor technologies. With an impressive portfolio of 29 patents, Hsu has made significant contributions to the field of integrated circuit structures, focusing on enhancing device architectures and manufacturing methods.

Latest Patents

Hsu's recent innovations include notable patents on self-aligned gate endcap (SAGE) architectures with gate-all-around devices. These patents detail methods for fabricating integrated circuit structures that involve a semiconductor fin and a nanowire, enhancing the performance and scalability of semiconductor devices. The structures describe a unique arrangement of gate structures and isolation features that optimize the electrical characteristics of the device.

Another critical patent focuses on substrate-less electrostatic discharge (ESD) integrated circuit structures. This invention outlines a novel design using semiconductor pedestals and fins that enable improved ESD protection without the need for a substrate, thereby streamlining the integration of these structures into existing technologies.

Career Highlights

William Hsu currently works at Intel Corporation, a global leader in semiconductor manufacturing. Throughout his career, Hsu has been committed to pushing the boundaries of what is possible in semiconductor technology, developing innovative solutions that address the challenges of modern electronics.

Collaborations

Hsu has collaborated with several esteemed colleagues, including Biswajeet Guha and Tahir Ghani. Together, their combined expertise has fostered a collaborative environment that fuels innovation and enhances the efficiency of their projects.

Conclusion

William Hsu's contributions to semiconductor technology are shaping the future of integrated circuit design and manufacturing. His ongoing work and collaborations continue to advance the field, demonstrating the vital role of inventors in driving technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…