The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Nov. 20, 2023
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Erica J. Thompson, Beaverton, OR (US);

Aditya Kasukurti, Hillsboro, OR (US);

Jun Sung Kang, Portland, OR (US);

Kai Loon Cheong, Beaverton, OR (US);

Biswajeet Guha, Hillsboro, OR (US);

William Hsu, Hillsboro, OR (US);

Bruce Beattie, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 64/01 (2025.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H10D 30/67 (2025.01); H10D 62/822 (2025.01); H10D 62/824 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6212 (2025.01); H10D 30/0243 (2025.01); H10D 30/0245 (2025.01); H10D 30/6215 (2025.01); H10D 30/751 (2025.01); H10D 62/121 (2025.01); H10D 62/292 (2025.01); H10D 64/015 (2025.01); H01L 21/02238 (2013.01); H01L 21/02241 (2013.01); H01L 21/31111 (2013.01); H01L 21/31122 (2013.01); H10D 30/6735 (2025.01); H10D 62/822 (2025.01); H10D 62/824 (2025.01);
Abstract

A nanowire device includes one or more nanowire having a first end portion, a second end portion, and a body portion between the first end portion and the second end portion. A first conductive structure is in contact with the first end portion and a second conductive structure is in contact with the second end portion. The body portion of the nanowire has a first cross-sectional shape and the first end portion has a second cross-sectional shape different from the first cross-sectional shape. Integrated circuits including the nanowire device and a method of cleaning a semiconductor structure are also disclosed.


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