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For the Inventor, By the Inventor

Portland, OR, United States of America

Bruce E Beattie

This inventor holds 23 USPTO granted patents and 4 published patent applications and 2 EPO patents, primarily in Nanowire Transistors. Top assignees: Intel Corporation, Weiss Scientific Glass Blowing Co., Other. Active years: 1990-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bruce E Beattie. Retrieved from https://idiyas.com/inventor/bruce-e-beattie

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 91.3

 

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 152(Granted Patents)


Location History:

  • Daytona Beach, FL (US) (1999)
  • Portland, OR (US) (1990 - 2024)

Company Filing History:

goldMedal21 out of 56,290 
 
Intel Corporation
 patents
silverMedal1 out of 1 
 
Weiss Scientific Glass Blowing Co.
 patent
bronzeMedal1 out of 834,453 
Other
 patents

Years Active: 1990-2025

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Areas of Expertise:
Nanowire Transistor
Integrated Circuit
Dielectric Isolation
Gate-All-Around
Three-Dimensional
Semiconductor Device
Channel Regions
Cavity Spacer
Self-Aligned
Oxidation Process
Etch Clean Sequence
Accessory
23 patents (USPTO):Explore Patents
1. 12453115 - Nanowire transistor structure and method of shaping (2025-10-21),
2. 12349394 - Dielectric isolation layer between a nanowire transistor and a substrate (2025-07-01),
3. 12328905 - Cavity spacer for nanowire transistors (2025-06-10),
4. 12302632 - Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process (2025-05-13),
5. 11929396 - Cavity spacer for nanowire transistors (2024-03-12),
6. 11901458 - Dielectric isolation layer between a nanowire transistor and a substrate (2024-02-13),
7. 11894368 - Gate-all-around integrated circuit structures fabricated using alternate etch selective material (2024-02-06),
8. 11869973 - Nanowire transistor structure and method of shaping (2024-01-09),
9. 11869891 - Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process (2024-01-09),
10. 11715787 - Self-aligned nanowire (2023-08-01),
11. 11404578 - Dielectric isolation layer between a nanowire transistor and a substrate (2022-08-02),
12. 11342411 - Cavity spacer for nanowire transistors (2022-05-24),
13. 11276691 - Gate-all-around integrated circuit structures having self-aligned source or drain undercut for varied widths (2022-03-15),
14. 11205715 - Self-aligned nanowire (2021-12-21),
15. 11069795 - Transistors with channel and sub-channel regions with distinct compositions and dimensions (2021-07-20),

Title: The Innovative Journey of Bruce E Beattie

Introduction: Bruce E Beattie, a talented inventor hailing from Portland, Oregon, has made significant contributions to the world of innovation with his creative mind and dedication to problem-solving.

Latest Patents: Bruce E Beattie holds several patents in various fields, including technology, engineering, and consumer products. His most recent patents focus on sustainable energy solutions and smart home devices.

Career Highlights: Throughout his illustrious career, Bruce E Beattie has worked with leading tech companies to bring his inventions to life. His innovative spirit and attention to detail have led to the successful commercialization of several groundbreaking products.

Collaborations: Bruce E Beattie has collaborated with top researchers, engineers, and designers to push the boundaries of technology and create products that enhance the lives of consumers. His ability to work effectively in multidisciplinary teams has been instrumental in his success as an inventor.

Conclusion: Bruce E Beattie's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors. His impact on the world of technology and consumer products is truly remarkable, solidifying his legacy as a pioneering inventor.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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