The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

Sep. 28, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Karthik Jambunathan, Hillsboro, OR (US);

Glenn A. Glass, Portland, OR (US);

Anand S. Murthy, Portland, OR (US);

Jun Sung Kang, Portland, OR (US);

Bruce E. Beattie, Portland, OR (US);

Anupama Bowonder, Portland, OR (US);

Biswajeet Guha, Hillsboro, OR (US);

Ju H. Nam, Hillsboro, OR (US);

Tahir Ghani, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66818 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/0669 (2013.01); H01L 29/0673 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/78696 (2013.01);
Abstract

Integrated circuits include fins including an upper/channel region and a lower/sub-channel region, the lower region having a first chemical composition and opposing sidewalls adjacent to an insulator material, and the upper region having a second chemical composition. A first width indicates the distance between the opposing sidewalls of the lower region at a first location is at least 1 nm wider than a second width indicating the distance between the opposing sidewalls of the upper region at a second location, the first location being within 10 nm of the second location (or otherwise relatively close to one another). The first chemical composition is distinct from the second chemical composition and includes a surface chemical composition at an outer surface of the opposing sidewalls of the lower region and a bulk chemical composition therebetween, the surface chemical composition including one or more of oxygen, nitrogen, carbon, chlorine, fluorine, and sulfur.


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