logo

For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Karthik Jambunathan

USPTO Granted Patents = 43 

 

Average Co-Inventor Count = 5.8

ph-index = 3

Forward Citations = 38(Granted Patents)


Location History:

  • Portland, OR (US) (2020 - 2022)
  • Hillsboro, OR (US) (2018 - 2023)
  • Kirkland, WA (US) (2021 - 2023)
  • Krikland, WA (US) (2023)

Company Filing History:

goldMedal43 out of 54,781 
 
Intel Corporation
 patents

Years Active: 2018-2025

Loading Chart...
Loading Chart...
Areas of Expertise:
Nanowire Transistors
Germanium NMOS Transistors
Epitaxial Oxide Plug
Dopant Diffusion Barrier
Channel Stress Promotion
Tensile-Strained Channels
FinFET Integration
Carbon-Based Layers
Substrate Modification
Backside Contact Resistance
Integrated Circuits
Transistor Leakage Reduction
43 patents (USPTO):Explore Patents
1. 12419091 - Source electrode and drain electrode protection for nanowire transistors (2025-09-16),
2. 11757037 - Epitaxial oxide plug for strained transistors (2023-09-12),
3. 11735670 - Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistors (2023-08-22),
4. 11699756 - Source/drain diffusion barrier for germanium nMOS transistors (2023-07-11),
5. 11588017 - Nanowire for transistor integration (2023-02-21),
6. 11538905 - Nanowire transistors employing carbon-based layers (2022-12-27),
7. 11482457 - Substrate defect blocking layers for strained channel semiconductor devices (2022-10-25),
8. 11444166 - Backside source/drain replacement for semiconductor devices with metallization on both sides (2022-09-13),
9. 11430787 - Forming crystalline source/drain contacts on semiconductor devices (2022-08-30),
10. 11411096 - Source electrode and drain electrode protection for nanowire transistors (2022-08-09),
11. 11404575 - Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer (2022-08-02),
12. 11335600 - Integration method for finfet with tightly controlled multiple fin heights (2022-05-17),
13. 11264501 - Device, method and system for promoting channel stress in a NMOS transistor (2022-03-01),
14. 11251302 - Epitaxial oxide plug for strained transistors (2022-02-15),
15. 11222977 - Source/drain diffusion barrier for germanium NMOS transistors (2022-01-11),

Title: The Innovative Mind of Karthik Jambunathan

Introduction:

Karthik Jambunathan, a talented inventor based in Hillsboro, Oregon, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

Karthik Jambunathan holds several patents in the areas of artificial intelligence, machine learning, and renewable energy technologies, showcasing his diverse range of expertise and innovative thinking.

Career Highlights:

With a background in computer science and engineering, Karthik has worked for leading tech companies, where he has spearheaded projects that have revolutionized the industry. His keen eye for detail and passion for pushing boundaries have led to the development of cutting-edge solutions.

Collaborations:

Throughout his career, Karthik Jambunathan has collaborated with top researchers, engineers, and scientists to bring his ideas to life. His ability to work effectively in multidisciplinary teams has resulted in the successful implementation of innovative technologies.

Conclusion:

In conclusion, Karthik Jambunathan stands as a visionary inventor whose relentless pursuit of innovation has left a lasting impact on the tech industry. His passion for creating solutions that make a difference sets him apart as a true pioneer in his field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…