Karthik Jambunathan

This inventor holds 44 USPTO granted patents and 6 published patent applications and 7 EPO patents, primarily in Transistor Technology. Top assignee: Intel Corporation. Active years: 2018-2026.

USPTO Granted Patents = 44 (Patent Applications = 6)

% Patents Active = 81.8

EPO Patents = 7 (Patent Applications = 11)

Average Co-Inventor Count = 5.8

ph-index = 3

Forward Citations = 51(Granted Patents)

Location History:

Portland, OR (US) (2020 - 2022)
Hillsboro, OR (US) (2018 - 2023)
Kirkland, WA (US) (2021 - 2023)
Krikland, WA (US) (2023)

Company Filing History:

44 out of 56,184

Intel Corporation

patents

Years Active: 2018-2026

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Areas of Expertise:

Germanium NMOS

Nanowire Transistors

Channel Materials

Dopant Diffusion Barrier

Epitaxial Oxide Plug

Strained Transistors

FinFET Integration

Tensile Strain

Silicon Substrate

Source/Drain Contacts

Integrated Circuits

Carbon-Based Layers

44 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12550401 - Doped STI to reduce source/drain diffusion for germanium NMOS transistors (2026-02-10),

2. 12419091 - Source electrode and drain electrode protection for nanowire transistors (2025-09-16),

3. 11757037 - Epitaxial oxide plug for strained transistors (2023-09-12),

4. 11735670 - Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistors (2023-08-22),

5. 11699756 - Source/drain diffusion barrier for germanium nMOS transistors (2023-07-11),

6. 11588017 - Nanowire for transistor integration (2023-02-21),

7. 11538905 - Nanowire transistors employing carbon-based layers (2022-12-27),

8. 11482457 - Substrate defect blocking layers for strained channel semiconductor devices (2022-10-25),

9. 11444166 - Backside source/drain replacement for semiconductor devices with metallization on both sides (2022-09-13),

10. 11430787 - Forming crystalline source/drain contacts on semiconductor devices (2022-08-30),

11. 11411096 - Source electrode and drain electrode protection for nanowire transistors (2022-08-09),

12. 11404575 - Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer (2022-08-02),

13. 11335600 - Integration method for finfet with tightly controlled multiple fin heights (2022-05-17),

14. 11264501 - Device, method and system for promoting channel stress in a NMOS transistor (2022-03-01),

15. 11251302 - Epitaxial oxide plug for strained transistors (2022-02-15),

Title: The Innovative Mind of Karthik Jambunathan

Introduction:

Karthik Jambunathan, a talented inventor based in Hillsboro, Oregon, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

Karthik Jambunathan holds several patents in the areas of artificial intelligence, machine learning, and renewable energy technologies, showcasing his diverse range of expertise and innovative thinking.

Career Highlights:

With a background in computer science and engineering, Karthik has worked for leading tech companies, where he has spearheaded projects that have revolutionized the industry. His keen eye for detail and passion for pushing boundaries have led to the development of cutting-edge solutions.

Collaborations:

Throughout his career, Karthik Jambunathan has collaborated with top researchers, engineers, and scientists to bring his ideas to life. His ability to work effectively in multidisciplinary teams has resulted in the successful implementation of innovative technologies.

Conclusion:

In conclusion, Karthik Jambunathan stands as a visionary inventor whose relentless pursuit of innovation has left a lasting impact on the tech industry. His passion for creating solutions that make a difference sets him apart as a true pioneer in his field.