The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Jan. 06, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Karthik Jambunathan, Kirkland, WA (US);

Biswajeet Guha, Hillsboro, OR (US);

Anupama Bowonder, Portland, OR (US);

Anand S. Murthy, Portland, OR (US);

Tahir Ghani, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7846 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/42392 (2013.01);
Abstract

Epitaxial oxide plugs are described for imposing strain on a channel region of a proximate channel region of a transistor. The oxide plugs form epitaxial and coherent contact with one or more source and drain regions adjacent to the strained channel region. The epitaxial oxide plugs can be used to either impart strain to an otherwise unstrained channel region (e.g., for a semiconductor body that is unstrained relative to an underlying buffer layer), or to restore, maintain, or increase strain within a channel region of a previously strained semiconductor body. The epitaxial crystalline oxide plugs have a perovskite crystal structure in some embodiments.


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