The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Jun. 30, 2017
Intel Corporation, Santa Clara, CA (US);
Karthik Jambunathan, Hillsboro, OR (US);
Cory C. Bomberger, Portland, OR (US);
Glenn A. Glass, Portland, OR (US);
Anand S. Murthy, Portland, OR (US);
Ju H. Nam, Hillsboro, OR (US);
Tahir Ghani, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Techniques are disclosed for forming diverse transistor channel materials enabled by a thin, inverse-graded, germanium (Ge)-based layer. The thin, inverse-graded, Ge-based layer (e.g., having a thickness of at most 500 nm) can then serve as a template for the growth of compressively strained PMOS channel material and tensile strained NMOS channel material to achieve gains in hole and electron mobility, respectively, in the channel regions of the devices. Such a relatively thin Ge-based layer can be formed with suitable surface quality/relaxation levels due to the inverse grading of the Ge concentration in the layer, where the Ge concentration is relatively greatest near the substrate and relatively lowest near the overlying channel material layer. In addition to the inverse-graded Ge concentration, the Ge-based layer may be characterized by the nucleation, and predominant containment, of defects at/near the interface between the substrate and the Ge-based layer.