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For the Inventor, By the Inventor

Portland, OR, United States of America

Cory C Bomberger

USPTO Granted Patents = 39 

 

Average Co-Inventor Count = 5.4

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:

goldMedal39 out of 54,664 
 
Intel Corporation
 patents

Years Active: 2021-2025

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39 patents (USPTO):
1. 12484272 - Source or drain structures with relatively high germanium content (2025-11-25),
2. 12439640 - Reduced contact resistivity with PMOS germanium and silicon doped with boron gate all around transistors (2025-10-07),
3. 12426342 - Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability (2025-09-23),
4. 12388011 - Top gate recessed channel CMOS thin film transistor and methods of fabrication (2025-08-12),
5. 12272727 - Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures (2025-04-08),
6. 12237420 - Fin smoothing and integrated circuit structures resulting therefrom (2025-02-25),
7. 12159901 - Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs (2024-12-03),
8. 12027585 - Source or drain structures with low resistivity (2024-07-02),
9. 12027417 - Source or drain structures with high germanium concentration capping layer (2024-07-02),
10. 12021149 - Fin smoothing and integrated circuit structures resulting therefrom (2024-06-25),
11. 11996404 - Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material (2024-05-28),
12. 11990513 - Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures (2024-05-21),
13. 11984449 - Channel structures with sub-fin dopant diffusion blocking layers (2024-05-14),
14. 11978784 - Gate-all-around integrated circuit structures having germanium nanowire channel structures (2024-05-07),
15. 11929320 - Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication (2024-03-12),

Title: Innovator Spotlight: Cory Bomberger - Revolutionizing Integrated Circuit Structures

Introduction:

Cory Bomberger, a prolific inventor based in Portland, OR, has made significant strides in the field of integrated circuit structures. With an impressive portfolio of 9 patents to his name and a focus on enhancing electronic devices' performance, Bomberger is a trailblazer in the technology industry.

Latest Patents:

Bomberger's recent patents showcase his expertise in optimizing source or drain structures with low resistivity and high germanium concentration capping layers within integrated circuit structures. By utilizing innovative materials such as silicon, germanium, and boron, he has successfully developed structures with resistivity levels below 0.3 mOhm·cm, setting new standards for efficiency and performance in electronic devices.

Career Highlights:

Currently affiliated with Intel Corporation, Bomberger continues to drive innovation and technological advancement within the company. His dedication to pushing the boundaries of integrated circuit design has earned him recognition as a key contributor to Intel's cutting-edge developments in semiconductor technology.

Collaborations:

Bomberger collaborates closely with esteemed colleagues Anand Murthy and Anand S. Murthy at Intel Corporation. Together, they form a dynamic team that leverages their combined expertise to tackle complex challenges and spearhead groundbreaking advancements in the field of integrated circuits.

Conclusion:

In conclusion, Cory Bomberger stands out as a visionary inventor and a driving force behind advancements in integrated circuit structures. His relentless pursuit of excellence and commitment to innovation continue to shape the future of electronic devices, making him a prominent figure in the technology landscape.

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