The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Dec. 22, 2023
Intel Corporation, Santa Clara, CA (US);
Gilbert Dewey, Hillsboro, OR (US);
Ryan Keech, Portland, OR (US);
Cory Bomberger, Portland, OR (US);
Cheng-Ying Huang, Hillsboro, OR (US);
Ashish Agrawal, Hillsboro, OR (US);
Willy Rachmady, Beaverton, OR (US);
Anand Murthy, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A device includes a device level having a metallization structure coupled to a semiconductor device and a transistor above the device level. The transistor has a body including a single crystal group III-V or group IV semiconductor material, a source structure on a first portion of the body and a drain structure on a second portion of the body, where the source structure is separate from the drain structure. The transistor further includes a gate structure including a first gate structure portion in a recess in the body and a second gate structure portion between the source structure and the drain structure. A source contact is coupled with the source structure and a drain contact is coupled with the drain structure. The source contact is in contact with the metallization structure in the device level.