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For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Cheng-Ying Huang

USPTO Granted Patents = 86 

 

Average Co-Inventor Count = 7.8

ph-index = 3

Forward Citations = 41(Granted Patents)

Forward Citations (Not Self Cited) = 27(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hillsboro, OR (US) (2020 - 2024)
  • Portland, OR (US) (2020 - 2024)
  • kPortland, OR (US) (2024)

Company Filing History:

goldMedal86 out of 54,688 
 
Intel Corporation
 patents

Years Active: 2020-2025

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Areas of Expertise:
Gate-All-Around Transistors
Stacked Transistor Architecture
Thin Film Transistors
Vertical Tunneling FETs
Three-Dimensional Integrated Circuits
Ferroelectric Gate Stacks
High Performance Semiconductor Materials
Interconnect Techniques
Non-Silicon Transistors
Epitaxial Layer Structures
Source-Channel Junctions
Dielectric Isolation Techniques
86 patents (USPTO):Explore Patents
1. 12414339 - Formation of gate spacers for strained PMOS gate-all-around transistor structures (2025-09-09),
2. 12388011 - Top gate recessed channel CMOS thin film transistor and methods of fabrication (2025-08-12),
3. 12369399 - Gate-to-gate isolation for stacked transistor architecture via selective dielectric deposition structure (2025-07-22),
4. 12342614 - Asymmetric gate structures and contacts for stacked transistors (2025-06-24),
5. 12288803 - Transistor with isolation below source and drain (2025-04-29),
6. 12255137 - Sideways vias in isolation areas to contact interior layers in stacked devices (2025-03-18),
7. 12243875 - Forksheet transistors with dielectric or conductive spine (2025-03-04),
8. 12230635 - Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approach (2025-02-18),
9. 12224202 - Forming an oxide volume within a fin (2025-02-11),
10. 12183668 - Thin-film transistors and MIM capacitors in exclusion zones (2024-12-31),
11. 12148806 - Stacked source-drain-gate connection and process for forming such (2024-11-19),
12. 12120865 - Arrays of double-sided dram cells including capacitors on the frontside and backside of a stacked transistor structure (2024-10-15),
13. 12107085 - Interconnect techniques for electrically connecting source/drain regions of stacked transistors (2024-10-01),
14. 12068319 - High performance semiconductor oxide material channel regions for NMOS (2024-08-20),
15. 12020929 - Epitaxial layer with substantially parallel sides (2024-06-25),

Title: The Innovative Journey of Cheng-Ying Huang

Introduction: Cheng-Ying Huang, a talented inventor based in Hillsboro, Oregon, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: Huang's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microprocessors and memory storage devices.

Career Highlights: With a career spanning over two decades, Cheng-Ying Huang has worked for leading tech companies, where he played a key role in the research and development of next-generation electronic devices. His expertise in semiconductor engineering has led to the successful commercialization of several groundbreaking products.

Collaborations: Throughout his career, Huang has collaborated with top researchers, engineers, and scientists in the industry. His ability to work effectively in multidisciplinary teams has resulted in the successful implementation of innovative solutions to complex technological challenges.

Conclusion: Cheng-Ying Huang's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His contributions continue to shape the future of semiconductor engineering, inspiring the next generation of inventors and engineers.

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