The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Dec. 14, 2022
Intel Corporation, Santa Clara, CA (US);
Rohit Galatage, Hillsboro, OR (US);
Cheng-Ying Huang, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Marko Radosavljevic, Portland, OR (US);
Mauro J. Kobrinsky, Portland, OR (US);
Jami Wiedemer, Scappoose, OR (US);
Munzarin Qayyum, Hillsboro, OR (US);
Evan Clinton, Carrollton, GA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
IC structures with nanoribbon stacks without dielectric protection caps for top nanoribbons, and associated methods and devices, are disclosed. An example IC structure includes a stack of nanoribbons, an opening over the top nanoribbon of the stack of nanoribbons, and a gate electrode material in the opening, where the opening has a first portion, a second portion, and a third portion, the second portion is between the first portion and the third portion, and where a width of a portion of the gate electrode material in the second portion is smaller than a width of a portion of the gate electrode material in the first portion. In such an IC structure, a gate insulator on the sidewalls of the first portion of the opening is materially discontinuous from a gate insulator on the sidewalls of the third portion of the opening.