Beaverton, OR, United States of America

Marko Radosavljevic

Average Co-Inventor Count = 5.5

ph-index = 15

Forward Citations = 1,422(Granted Patents)

Forward Citations (Not Self Cited) = 1,141(Sep 21, 2024)

DiyaCoin DiyaCoin 1.92 

Inventors with similar research interests:


Location History:

  • Beaverton, CA (US) (2008 - 2009)
  • Beaverton, OH (US) (2018)
  • Beaverton, OR (US) (2007 - 2024)
  • Portland, OR (US) (2009 - 2024)


Years Active: 2007-2025

where 'Filed Patents' based on already Granted Patents

373 patents (USPTO):

Title: Marko Radosavljevic: Revolutionizing Semiconductor Technology

Introduction:

In the world of innovations and patents, few names command as much respect as Marko Radosavljevic. Hailing from Beaverton, Oregon, he has proven himself to be a prolific inventor and a driving force behind advancements in semiconductor technology. With an impressive portfolio consisting of over 343 patents, Radosavljevic stands out as a leading figure in the field. This article aims to shed light on his latest patents, career highlights, and notable collaborations, highlighting his contributions to the world of technology.

Latest Patents:

Marko Radosavljevic's recent patents truly showcase his ingenuity and expertise. Two notable examples include:

1. E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown:

This patent presents a novel transistor design and associated methods of fabrication. The invention focuses on optimizing transistor performance by incorporating a gate spacer for tunable threshold voltage and enhanced breakdown characteristics. This innovation has the potential to revolutionize transistor technology and pave the way for more efficient electronic devices.

2. Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication:

In this patent, Radosavljevic introduces a device featuring a III-N material, emphasizing reduced contact resistance. The design encompasses a well-structured terminal structure with polarization charge inducing layers, gate electrodes, source structures, and drain structures. This invention offers promising possibilities in the realm of III-N devices, encompassing applications such as power electronics and optoelectronics.

Career Highlights:

Marko Radosavljevic has made substantial contributions throughout his successful career. He has worked with renowned companies such as Intel Corporation and Google Inc. His tenure at these industry giants allowed him to delve deep into cutting-edge research and development, making invaluable contributions to their technological advancements. Radosavljevic's expertise in semiconductor technology has enabled him to shape the future of electronics.

Collaborations:

During his career, Marko Radosavljevic has had the privilege of collaborating with several esteemed individuals. Notably, he has worked alongside the talented Han Wui Then and Sansaptak Dasgupta. This collaboration underscores Radosavljevic's commitment to teamwork and his ability to bring together brilliant minds to drive innovation. Together, they have shared insights, bounced ideas, and pushed the boundaries of semiconductor technology.

Conclusion:

Marko Radosavljevic's impact on the field of semiconductor technology cannot be overstated. With a substantial number of patents under his belt, his contributions have laid the foundation for the next generation of electronic devices. Through his work at Intel Corporation and Google Inc., Radosavljevic has solidified his position as a leading innovator in the industry. His collaborations with esteemed colleagues further highlight his dedication to advancing technology. As we eagerly anticipate his future inventions, it is clear that Marko Radosavljevic will continue to shape the landscape of innovation with his remarkable contributions.

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