The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Aug. 27, 2021
Intel Corporation, Santa Clara, CA (US);
Richard Geiger, Munich, DE;
Georgios Panagopoulos, Munich, DE;
Luis Felipe Giles, Neubiberg, DE;
Peter Baumgartner, Munich, DE;
Harald Gossner, Riemerling, DE;
Sansaptak Dasgupta, Hillsboro, OR (US);
Marko Radosavljevic, Portland, OR (US);
Han Wui Then, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Disclosed herein are IC devices, packages, and device assemblies that include III-N diodes with n-doped wells and capping layers. An example IC device includes a support structure and a III-N layer, provided over a portion of the support structure, the III-N layer including an n-doped well of a III-N semiconductor material having n-type dopants with a dopant concentration of at least 5×10dopants per cubic centimeter. The IC device further includes a first and a second electrodes and at least one capping layer. The first electrode interfaces a first portion of the n-doped well. The capping layer interfaces a second portion of the n-doped well and includes a semiconductor material with a dopant concentration below 10dopants per cubic centimeter. The second electrode is provided so that the capping layer is between the second portion of the n-doped well and the second electrode.