Harald Gossner

This inventor holds 86 USPTO granted patents and 19 published patent applications and 3 EPO patents, primarily in Semiconductor Devices (CPC class H01L29-7436). Top assignees: Infineon Technologies Ag, Intel Corporation, Indian Institute of Science. Active years: 2001-2026.

USPTO Granted Patents = 86 (Patent Applications = 19)

% Patents Active = 60.5

EPO Patents = 3 (Patent Applications = 13)

Average Co-Inventor Count = 2.8

ph-index = 11

Forward Citations = 471(Granted Patents)

Forward Citations (Not Self Cited) = 439(Dec 10, 2025)

Inventors with similar research interests:

Location History:

München, DE (2001)
Munich, DE (2010)
Reimerling, DE (2015)
Riemerling, DE (2002 - 2024)

Company Filing History:

59 out of 15,005

Infineon Technologies Ag

Indian Institute of Science

patents

4. 5 out of 511

Intel Mobile Communications Gmbh

patents

5. 3 out of 117

Indian Institute of Technology Bombay

patents

6. 1 out of 254

Intel Deutschland Gmbh

patents

where one patent can have more than one assignee

Years Active: 2001-2026

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Areas of Expertise:

Vertical Diodes

Buried Power Rails

III-N Diodes

Variable Capacitance Device

Schottky Diode

Electrostatic Discharge

Field Effect Transistors

Silicon Controlled Rectifier

Integrated Circuit Testing

High Voltage Devices

Tunable FIN-SCR

Drain Extended MOS

86 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12690275 - Integrated circuit structures including elastrostatic discharge ballasting resistor based on buried power rail (2026-07-21),

2. 12538586 - Vertical diodes extending through support structures (2026-01-27),

3. 12431424 - Buried power rails integrated with decoupling capacitance (2025-09-30),

4. 12396232 - III-N diodes with n-doped wells and capping layers (2025-08-19),

5. 12362241 - Semiconductor structure and method for forming a semiconductor structure (2025-07-15),

6. 12034085 - Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers (2024-07-09),

7. 11545586 - Group III-nitride Schottky diode (2023-01-03),

8. 11424354 - Group III-nitride silicon controlled rectifier (2022-08-23),

9. 11380806 - Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers (2022-07-05),

10. 11373995 - Group III-nitride antenna diode (2022-06-28),

11. 11355924 - Circuit for electrostatic discharge protection for wide frequency range multi-band interfaces (2022-06-07),

12. 10629586 - Dual fin silicon controlled rectifier (SCR) electrostatic discharge (ESD) protection device (2020-04-21),

13. 10535762 - FinFET SCR with SCR implant under anode and cathode junctions (2020-01-14),

14. 10483258 - Semiconductor devices and methods to enhance electrostatic discharge (ESD) robustness, latch-up, and hot carrier immunity (2019-11-19),

15. 10374068 - Tunnel field effect transistors (2019-08-06),

Title: Harald Gossner - Innovative Inventor from Riemerling, DE

Introduction: Harald Gossner is a renowned inventor hailing from Riemerling, Germany, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Harald Gossner holds several patents in the areas of renewable energy, sustainable transportation, and advanced materials, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Harald Gossner has worked with leading research institutions and technology companies, playing a key role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Harald Gossner has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Harald Gossner's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and entrepreneurs worldwide.