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For the Inventor, By the Inventor

Riemerling, Germany

Harald Gossner

USPTO Granted Patents = 84 

 

Average Co-Inventor Count = 2.8

ph-index = 11

Forward Citations = 464(Granted Patents)

Forward Citations (Not Self Cited) = 439(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • München, DE (2001)
  • Munich, DE (2010)
  • Reimerling, DE (2015)
  • Riemerling, DE (2002 - 2024)

Company Filing History:

goldMedal59 out of 14,724 
 
Infineon Technologies Ag
 patents
silverMedal14 out of 54,750 
 
Intel Corporation
 patents
bronzeMedal5 out of 511 
 
Intel Mobile Communications Gmbh
 patents
4. 5 out of 141 
 
Indian Institute of Science
 patents
5. 3 out of 114 
 
Indian Institute of Technology Bombay
 patents
6. 1 out of 254 
 
Intel Deutschland Gmbh
 patents
where one patent can have more than one assignee

Years Active: 2001-2025

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Areas of Expertise:
Electrostatic Discharge Protection
Semiconductor Devices
Field Effect Transistors
Silicon Controlled Rectifier
Group III-Nitride Diodes
Tunable Fin-SCR
Buried Power Rails
Two-Dimensional Electron Gas
High Voltage Devices
Non-Planar Technologies
Integrated Circuit Testing
84 patents (USPTO):Explore Patents
1. 12431424 - Buried power rails integrated with decoupling capacitance (2025-09-30),
2. 12396232 - III-N diodes with n-doped wells and capping layers (2025-08-19),
3. 12362241 - Semiconductor structure and method for forming a semiconductor structure (2025-07-15),
4. 12034085 - Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers (2024-07-09),
5. 11545586 - Group III-nitride Schottky diode (2023-01-03),
6. 11424354 - Group III-nitride silicon controlled rectifier (2022-08-23),
7. 11380806 - Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers (2022-07-05),
8. 11373995 - Group III-nitride antenna diode (2022-06-28),
9. 11355924 - Circuit for electrostatic discharge protection for wide frequency range multi-band interfaces (2022-06-07),
10. 10629586 - Dual fin silicon controlled rectifier (SCR) electrostatic discharge (ESD) protection device (2020-04-21),
11. 10535762 - FinFET SCR with SCR implant under anode and cathode junctions (2020-01-14),
12. 10483258 - Semiconductor devices and methods to enhance electrostatic discharge (ESD) robustness, latch-up, and hot carrier immunity (2019-11-19),
13. 10374068 - Tunnel field effect transistors (2019-08-06),
14. 10319662 - Non-planar electrostatic discharge (ESD) protection devices with nano heat sinks (2019-06-11),
15. 10211200 - Low trigger and holding voltage silicon controlled rectifier (SCR) for non-planar technologies (2019-02-19),

Title: Harald Gossner - Innovative Inventor from Riemerling, DE

Introduction: Harald Gossner is a renowned inventor hailing from Riemerling, Germany, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Harald Gossner holds several patents in the areas of renewable energy, sustainable transportation, and advanced materials, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Harald Gossner has worked with leading research institutions and technology companies, playing a key role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Harald Gossner has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Harald Gossner's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and entrepreneurs worldwide.

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