The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
Jun. 23, 2022
Intel Corporation, Santa Clara, CA (US);
Harald Gossner, Riemerling, DE;
Peter Baumgartner, Munich, DE;
Uwe Hodel, Putzbrunn, DE;
Domagoj Siprak, Munich, DE;
Stephan Leuschner, Munich, DE;
Richard Geiger, Munich, DE;
Han Wui Then, Portland, OR (US);
Marko Radosavljevic, Portland, OR (US);
Sansaptak Dasgupta, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.