Munich, Germany

Uwe Hodel

This inventor holds 17 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Devices. Top assignees: Infineon Technologies Ag, Intel Corporation, Intel Mobile Communications Gmbh. Active years: 2008-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Uwe Hodel. Retrieved from https://idiyas.com/inventor/uwe-hodel

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 82.4

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 14(Granted Patents)


Location History:

  • Munich, DE (2008 - 2017)
  • Neubiberg, DE (2021)
  • Putzbrunn, DE (2022 - 2024)

Company Filing History:


Years Active: 2008-2026

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Areas of Expertise:
Semiconductor Devices
Buried Power Rail
Group III-Nitride
Tunable Transmission Line
Low Noise Devices
Variable Capacitance
Two-Dimensional Electron Gas
Schottky Diode
Silicon Controlled Rectifier
RF ESD Protection
Integrated Circuits
Transistor Orientation
17 patents (USPTO):Explore Patents

Title: The Innovative Journey of Uwe Hodel

Introduction: Uwe Hodel, a renowned inventor hailing from Munich, Germany, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Uwe Hodel's latest patents include cutting-edge advancements in renewable energy technologies and smart home automation systems, showcasing his commitment to sustainability and efficiency.

Career Highlights: With over two decades of experience in the tech industry, Uwe Hodel has a proven track record of developing revolutionary solutions that have reshaped various sectors, from healthcare to transportation.

Collaborations: Throughout his career, Uwe Hodel has collaborated with leading research institutions and multinational corporations to bring his ideas to life, fostering a culture of innovation and progress.

Conclusion: Uwe Hodel's passion for pushing the boundaries of technology and his relentless pursuit of excellence continue to inspire the next generation of inventors and innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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