The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Sep. 29, 2017
Intel Corporation, Santa Clara, CA (US);
Harald Gossner, Riemerling, DE;
Peter Baumgartner, Munich, DE;
Uwe Hodel, Putzbrunn, DE;
Domagoj Siprak, Munich, DE;
Stephan Leuschner, Munich, DE;
Richard Geiger, Munich, DE;
Han Wui Then, Portland, OR (US);
Marko Radosavljevic, Portland, OR (US);
Sansaptak Dasgupta, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A Group III-Nitride (III-N) device structure is presented comprising: a heterostructure having three or more layers comprising III-N material, a cathode comprising donor dopants, wherein the cathode is on a first layer of the heterostructure, an anode within a recess that extends through two or more of the layers of the heterostructure, wherein the anode comprises a first region wherein the anode is separated from the heterostructure by a high k dielectric material, and a second region wherein the anode is in direct contact with the heterostructure, and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.