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For the Inventor, By the Inventor

Hsinchu, Taiwan

Tsung-Yi Huang

USPTO Granted Patents = 106 

Average Co-Inventor Count = 2.1

ph-index = 8

Forward Citations = 194(Granted Patents)

Forward Citations (Not Self Cited) = 177(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal56 out of 786 
 
Richtek Technology Corporation
 patents
silverMedal25 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
bronzeMedal25 out of 68 
 
Richtek Technology Corporation, R.o.c
 patents

Years Active: 2002-2021

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Areas of Expertise:
High Voltage Devices
Metal Oxide Semiconductor
Mos Devices
Power Devices
Switching Regulators
Insulated Gate Bipolar Transistors
Gallium Nitride
Transient Voltage Suppression
Dual-Well Mos
Lateral Double Diffused Mos
Vertical Semiconductor Devices
Junction Barrier Schottky Diodes
106 patents (USPTO):Explore Patents
1. 11171232 - High voltage device and manufacturing method thereof (2021-11-09),
2. 11063148 - High voltage depletion mode MOS device with adjustable threshold voltage and manufacturing method thereof (2021-07-13),
3. 10998404 - High voltage device and manufacturing method thereof (2021-05-04),
4. 10943978 - High voltage device and manufacturing method thereof (2021-03-09),
5. 10923589 - High voltage device and manufacturing method thereof (2021-02-16),
6. 10868115 - High voltage device and manufacturing method thereof (2020-12-15),
7. 10811532 - High voltage device and manufacturing method thereof (2020-10-20),
8. 10714612 - High voltage device and manufacturing method thereof (2020-07-14),
9. 10680104 - Metal oxide semiconductor (MOS) device and manufacturing method thereof (2020-06-09),
10. 10680059 - High voltage metal oxide semiconductor device and manufacturing method thereof (2020-06-09),
11. 10622473 - High voltage metal oxide semiconductor device and manufacturing method thereof (2020-04-14),
12. 10622440 - High voltage metal oxide semiconductor device and manufacturing method thereof (2020-04-14),
13. 10600908 - High voltage device and manufacturing method thereof (2020-03-24),
14. 10600895 - Power device (2020-03-24),
15. 10497806 - Metal oxide semiconductor device having recess and manufacturing method thereof (2019-12-03),

Title: The Innovative Journey of Inventor Tsung-Yi Huang

Introduction: Tsung-Yi Huang is a pioneering inventor hailing from Hsinchu, Taiwan. His dedication to innovation and problem-solving has led to remarkable advancements in various fields.

Latest Patents: Tsung-Yi Huang holds several cutting-edge patents in the areas of technology and engineering, showcasing his commitment to pushing the boundaries of what is possible.

Career Highlights: Throughout his illustrious career, Tsung-Yi Huang has consistently demonstrated a knack for developing groundbreaking solutions to complex challenges. His work has not only earned him recognition within the industry but has also significantly impacted the way we approach innovation.

Collaborations: Tsung-Yi Huang has collaborated with leading experts and organizations in the field, leveraging collective knowledge and expertise to drive forward progress and bring his ideas to life. His collaborative spirit has been instrumental in the success of many projects.

Conclusion: In conclusion, Tsung-Yi Huang stands as a shining example of an inventor whose relentless pursuit of innovation has reshaped industries and inspired future generations. His contributions to the world of inventions are truly invaluable.

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