The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Mar. 13, 2019
Richtek Technology Corporation, Zhubei, Hsinchu, TW;
Tsung-Yi Huang, Hsinchu, TW;
RICHTEK TECHNOLOGY CORPORATION, Zhubei, Hsinchu, TW;
Abstract
A metal oxide semiconductor (MOS) device includes: a semiconductor layer, an isolation structure, a well, a gate, a source, a drain, a first lightly doped region, and a second lightly doped region. The first lightly doped region is located right below a spacer layer and a portion of a dielectric layer of the gate. In a channel direction, the first lightly doped region is between and contacts the drain and an inversion current channel. The second lightly doped region includes a first part and a second part. The first part is located right below the spacer which is near the source, and the first part is between and contacts the source and the inversion current channel. The second part is located right below the spacer which is near the drain, and the second part is between and contacts the drain and the first lightly doped region.