The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Jun. 22, 2019
Applicant:
Richtek Technology Corporation, Zhubei, TW;
Inventors:
Tsung-Yi Huang, Hsinchu, TW;
Chu-Feng Chen, Hsinchu, TW;
Assignee:
RICHTEK TECHNOLOGY CORPORATION, Zhubei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76202 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01);
Abstract
A high voltage device includes: a semiconductor layer, an isolation region, a deep well, a buried layer, a first high voltage well, a first conductivity type well, a second high voltage well, a body region, a body contact, a deep well column, a gate, a source and a drain. The deep well column is located between the drain and a boundary of the conductive layer which is near the source in a channel direction. The deep well column is a minority carriers absorption channel, to avoid turning ON a parasitic transistor in the high voltage device.