The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Mar. 13, 2019
Richtek Technology Corporation, Zhubei, Hsinchu, TW;
Tsung-Yi Huang, Hsinchu, TW;
Chien-Yu Chen, Hsinchu, TW;
RICHTEK TECHNOLOGY CORPORATION, Zhubei, Hsinchu, TW;
Abstract
A high voltage device includes: a semiconductor layer, an isolation structure, a drift oxide region, a well, a body region, a body contact, a buffer region, a gate, and a source and a drain. The body contact includes a main body contact and at least one sub-body contact. The main body contact is adjacent to the source, wherein the main body contact and the source are rectangles that extend along a width direction, and the source is located between the main body contact and the gate. The sub-body contact extends from the main body contact toward the gate and contacts an inverse current channel. The buffer region encompasses all the periphery of the body region below a top surface of the semiconductor layer, wherein an impurity concentration of the buffer region is lower than an impurity concentration of the body region.