The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Jul. 04, 2019
Applicant:
Richtek Technology Corporation, Zhubei, TW;
Inventor:
Tsung-Yi Huang, Hsinchu, TW;
Assignee:
RICHTEK TECHNOLOGY CORPORATION, Zhubei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/225 (2006.01); H01L 21/74 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1083 (2013.01); H01L 21/2253 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/743 (2013.01); H01L 29/0653 (2013.01); H01L 29/1087 (2013.01); H01L 29/1095 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01);
Abstract
A high voltage device includes: a semiconductor layer, an isolation structure, a first deep well, a second deep well, a drift well, a first well, a second well, a body region, a body contact, a high voltage well, a gate, and a source and a drain. The high voltage well is formed in the second deep well, and the high voltage well is not in contact with any of the first deep well, the first well, and the second well, wherein at least part of the high voltage well is located right below all of a drift region to suppress a latch-up current generated in the high voltage device.