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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10600908 B1

PDFFull Text
Date of Patent:
Mar. 24, 2020

Filed:

Mar. 27, 2018

High voltage device and manufacturing method thereof

Applicant:

Richtek Technology Corporation, Chupei, HsinChu, TW;

Inventor:

Tsung-Yi Huang, HsinChu, TW;

Assignee:

RICHTEK TECHNOLOGY CORPORATION, Zhubei, Hsinchu, unknown;

Attorney:

Tung & Associates

Primary Examiner:

David Vu

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7823 (2013.01); H01L 29/0649 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/66681 (2013.01); H01L 29/66689 (2013.01); H01L 29/66704 (2013.01); H01L 29/7825 (2013.01); H01L 29/7835 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 29/086 (2013.01); H01L 29/42368 (2013.01);
Abstract

The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a semiconductor substrate, and includes: a gate, a source, a drain, and at least one plug plate electrode. The plug plate electrode is in direct contact with the gate, and is electrically connected to the gate. The plug plate electrode extends downwards from the bottom of the gate to the semiconductor substrate, through a current vertical height of a conductive current when the high voltage is ON. The plug plate electrode is between the source and the drain in a lateral direction. The plug plate electrode includes a dielectric layer and a conductive layer.

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