Richtek Technology Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Richtek Technology Corporation, R.o.c

Tsung-Yi Huang

Chien-Wei Chiu

Chien-Hao Huang

Ching-Yao Yang

Hung-Der Su

Puo-Yu Chiang

Huan-Ping Chu

Fu-Hsin Chen

Chu-Feng Chen

Ruey-Hsin Liu

Chih-Fang Huang

Ting-Fu Chang

Tsung-Yu Yang

Hsueh-Liang Chou

Fu-Jier Fan

Shun-Liang Hsu

Chen-Liang Chu

Tsung-Chieh Hsiao

Jeng Gong

Chen-Bau Wu

Fei-Yuh Chen

Chun-Ting Liao

Eric Huang

Kuo-Hsuan Lo

Chyi-Chyuan Huang

Weng-Chu Chu

Ya-Hsien Liu

Po-Chin Peng

Ying-Shiou Lin

Chien-Chih Chou

Ru-Yi Su

Chun-Lin Tsai

Wen-Yi Liao

Chien-Yu Chen

Jin-Lian Su

Tsai Chun Lin

Yu Wen Chen

Chung-Yeh Wu

Yt Tsai

Kuo-Cheng Chang

Jian-Hsing Lee

Shen-Ping Wang

Jun Xiu Liu

Wu-Te Weng

Kun-Huang Yu

Chi-Hsuen Chang

Ting-Wei Liao

Chi-Hung Kao

Tzu-Chiang Sung

Tzu-Cheng Kao

Shih-Hui Chen

Kuo-Shu Huang

Chung-I Chen

Robin Hsieh

Rann Shyan Yeh

Chih Po Huang

Chih-Wen (Albert) Yao

Ting-Pang Li

YU-Ting Yeh

Albert Yao

Pai-Kang Hsu

Huang-Ping Chu

Chien-Kai Chang

Chung-Yu Hung

K C Chang

Tsung-Ying Tsai

Kun-Hun You

Yuh-Chyuan Wang

Wen-Liang Wang

A high voltage device for use as a lower switch in a power stage of a switching regulator includes at least one lateral diffused metal oxide semiconductor (LDMOS) device and at least one Schottky barrier diode (SBD). The LDMOS device includes: a well, a body region, a gate, a source, and a drain. The SBD includes a Schottky metal layer and a Schottky semiconductor layer. The Schottky metal layer is electrically connected to the source, and the Schottky semiconductor layer is in contact with the well.

High voltage device and manufacturing method thereof

A high voltage depletion mode MOS device with adjustable threshold voltage includes: a first conductive type well region; a second conductive type channel region, wherein when the channel region is not depleted, the MOS device is conductive, and when the channel region is depleted, the MOS device is non-conductive; a second conductive type connection region which contacts the channel region; a first conductive type gate, for controlling the conductive condition of the MOS device; a second conductive type lightly doped diffusion region formed under a spacer layer of the gate and contacting the channel region; a second type source region; and a second type drain region contacting the connection region but not contacting the gate; wherein the gate has a first conductive type doping or both a first and a second conductive type doping, and wherein a net doping concentration of the gate is determined by a threshold voltage target.

High voltage depletion mode MOS device with adjustable threshold voltage and manufacturing method thereof

A high voltage device includes: a semiconductor layer, an isolation structure, a first deep well, a second deep well, a drift well, a first well, a second well, a body region, a body contact, a high voltage well, a gate, and a source and a drain. The high voltage well is formed in the second deep well, and the high voltage well is not in contact with any of the first deep well, the first well, and the second well, wherein at least part of the high voltage well is located right below all of a drift region to suppress a latch-up current generated in the high voltage device.

An N-type high voltage device includes: a semiconductor layer, a well region, a floating region, a bias region, a body region, a body contact, a gate, a source and a drain. The floating region and the bias region both have P-type conductivity, and both are formed in a drift region in the well region. The bias region is electrically connected with a predetermined bias voltage, and the floating region is electrically floating, to increase a breakdown voltage of the high voltage device and to suppress turning-ON a parasitic transistor in the high voltage device.

A high voltage device includes: a crystalline silicon layer, a well, a body region, a gate, a source, and a drain. The body region has a P-type conductivity type, and is formed in the well. The gate is located on and in contact with the well. The source and the drain have an N-type conductivity type, and are located below, outside, and at different sides of the gate, and are located in the body region and the well respectively. An inverse region is defined in the body region between the source and the well, to serve as an inverse current channel in an ON operation. The inverse region includes a germanium distribution region which has a germanium atom concentration higher than 1*10atoms/cm. Adrift region is defined in the well, between the body region and the drain, to serve as a drift current channel in an ON operation.

A high voltage device includes: a semiconductor layer, an isolation region, a deep well, a buried layer, a first high voltage well, a first conductivity type well, a second high voltage well, a body region, a body contact, a deep well column, a gate, a source and a drain. The deep well column is located between the drain and a boundary of the conductive layer which is near the source in a channel direction. The deep well column is a minority carriers absorption channel, to avoid turning ON a parasitic transistor in the high voltage device.

A high voltage device includes: a semiconductor layer, an isolation structure, a drift oxide region, a well, a body region, a body contact, a buffer region, a gate, and a source and a drain. The body contact includes a main body contact and at least one sub-body contact. The main body contact is adjacent to the source, wherein the main body contact and the source are rectangles that extend along a width direction, and the source is located between the main body contact and the gate. The sub-body contact extends from the main body contact toward the gate and contacts an inverse current channel. The buffer region encompasses all the periphery of the body region below a top surface of the semiconductor layer, wherein an impurity concentration of the buffer region is lower than an impurity concentration of the body region.

A high voltage device includes: a semiconductor layer, an isolation structure, a drift oxide region, a well, a body region, a gate, at least one sub-gate, a source, a drain and a conductive connection structure. The drift oxide region is located on a drift region in an operation region. The sub-gate is formed on the drift oxide region in the operation region. The sub-gate is a rectangle shape extending along a width direction, and in parallel with the gate. A conductive connection structure connects the gate and the sub-gate.

A high voltage MOS device includes: a well, a drift region, a gate, a source, a drain, and plural buried columns. A part of the gate is stacked on a part of the well, and another part of the gate is stacked on a part of the drift region. The source connects the well in a lateral direction. The drain connects the drift region in the lateral direction. The drain and the source are separated by the well and the drift region, and the drain and the source are located at different sides of the gate. The plural buried columns are formed beneath the top surface by a predetermined distance, and each buried column does not connect the top surface. At least a part of every buried column is surrounded by the drift region, and the buried columns and the drift region are arranged in an alternating manner.

High voltage metal oxide semiconductor device and manufacturing method thereof

A metal oxide semiconductor (MOS) device includes: a semiconductor layer, an isolation structure, a well, a gate, a source, a drain, a first lightly doped region, and a second lightly doped region. The first lightly doped region is located right below a spacer layer and a portion of a dielectric layer of the gate. In a channel direction, the first lightly doped region is between and contacts the drain and an inversion current channel. The second lightly doped region includes a first part and a second part. The first part is located right below the spacer which is near the source, and the first part is between and contacts the source and the inversion current channel. The second part is located right below the spacer which is near the drain, and the second part is between and contacts the drain and the first lightly doped region.

Metal oxide semiconductor (MOS) device and manufacturing method thereof

A high voltage MOS device includes: a first drift region with a first conductive type, a body region with a second conductive type, plural second drift regions with the second conductive type, a gate, a source region with the first conductive type, a drain with the first conductive type, and a body contact region with the second conductive type. The plural second drift regions contact the body region along the lateral direction, and are located separately in the width direction. Any neighboring two second drift regions do not contact each other. Each of the second drift regions is separated from the drain by the first drift region.

A high voltage MOS device includes: a well, a body region, a gate, a source, plural body contact regions and a drain. The plural body contact regions are formed in the body region, wherein each of the body contact region is located beneath the top surface and contacts the top surface in the vertical direction, and is in contact or not in contact with the gate in the lateral direction. The plural body contact regions are arranged substantially in parallel in the width direction and any two neighboring body contact regions are not in contact with each other in the width direction. The gate includes a poly-silicon layer which serves as the only electrical contact of the gate, and every part of the poly-silicon layer is the first conductivity type.

The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a semiconductor substrate, and includes: a gate, a source, a drain, and at least one plug plate electrode. The plug plate electrode is in direct contact with the gate, and is electrically connected to the gate. The plug plate electrode extends downwards from the bottom of the gate to the semiconductor substrate, through a current vertical height of a conductive current when the high voltage is ON. The plug plate electrode is between the source and the drain in a lateral direction. The plug plate electrode includes a dielectric layer and a conductive layer.

The invention provides a power device, which includes: an operation layer, including a top surface, a body region and a drift region, the body region and the drift region being connected in a lateral direction, to form a PN junction along a channel width direction between the body region and the drift region; a gate, formed on the top surface, and the PN junction is located under the gate; a source, formed in a portion of the operation layer between the body region and the top surface; a drain, formed in another portion of the operation layer between the drift region and the top surface; a first conduction portion, formed on the top surface for electrically connecting the source; a conduction layer, formed on the first conduction portion and electrically connected to the source via the first conduction portion; and a second conduction portion, formed on the top surface and between the conduction layer and the drift region in a thickness direction, for electrically connecting the drift region and the conduction layer, wherein a Schottky diode is formed by the second conduction portion and the drift region.

Power device

The present invention provides a MOS (Metal-Oxide-Silicon) device and a manufacturing method thereof. The MOS device includes: a semiconductor substrate, a gate, a source, a drain, and two LDDs (Lightly-Doped-Drains). At least one recess is formed at an upper surface of the semiconductor substrate. The recess has a depth which is deeper than the depth of the two LDDs. The recess is filled with a conductive material. A vertical connection portion is formed at a boundary of the recess in the vertical direction, to at least connect one of the LDDs to the drain. The LDD closer to the drain is not laterally in contact with the drain but is connected to the drain by the vertical direction.

Metal oxide semiconductor device having recess and manufacturing method thereof

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Hsinchu, Taiwan

Tsung-Yi Huang