The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Mar. 14, 2019
Applicant:
Richtek Technology Corporation, Zhubei, TW;
Inventor:
Tsung-Yi Huang, Hsinchu, TW;
Assignee:
RICHTEK TECHNOLOGY CORPORATION, Zhubei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1087 (2013.01); H01L 21/743 (2013.01); H01L 29/1095 (2013.01); H01L 29/408 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01);
Abstract
An N-type high voltage device includes: a semiconductor layer, a well region, a floating region, a bias region, a body region, a body contact, a gate, a source and a drain. The floating region and the bias region both have P-type conductivity, and both are formed in a drift region in the well region. The bias region is electrically connected with a predetermined bias voltage, and the floating region is electrically floating, to increase a breakdown voltage of the high voltage device and to suppress turning-ON a parasitic transistor in the high voltage device.