The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Dec. 25, 2018
Applicant:
Richtek Technology Corporation, Zhubei, Hsinchu, TW;
Inventor:
Tsung-Yi Huang, Hsinchu, TW;
Assignee:
RICHTEK TECHNOLOGY CORPORATION, Zhubei, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 29/0653 (2013.01); H01L 29/0657 (2013.01); H01L 29/086 (2013.01); H01L 29/0878 (2013.01); H01L 29/7813 (2013.01); H01L 29/7831 (2013.01);
Abstract
A high voltage device includes: a semiconductor layer, an isolation structure, a drift oxide region, a well, a body region, a gate, at least one sub-gate, a source, a drain and a conductive connection structure. The drift oxide region is located on a drift region in an operation region. The sub-gate is formed on the drift oxide region in the operation region. The sub-gate is a rectangle shape extending along a width direction, and in parallel with the gate. A conductive connection structure connects the gate and the sub-gate.