Portland, OR, United States of America

Mauro J Kobrinsky

USPTO Granted Patents = 92 

 

Average Co-Inventor Count = 4.7

ph-index = 11

Forward Citations = 771(Granted Patents)

Forward Citations (Not Self Cited) = 748(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Hillsboro, OR (US) (2004 - 2011)
  • Portland, OR (US) (2007 - 2024)

Company Filing History:


Years Active: 2004-2025

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92 patents (USPTO):

Title: The Innovative Contributions of Mauro J. Kobrinsky

Introduction

Mauro J. Kobrinsky, a prominent inventor based in Portland, Oregon, has made significant strides in the field of integrated circuit technology. With an impressive portfolio of 79 patents, Kobrinsky is at the forefront of innovation in the semiconductor industry. His work, primarily conducted at Intel Corporation, has paved the way for advancements in circuit design and fabrication methods, influencing both current and future technologies.

Latest Patents

Among his latest inventions are groundbreaking patents focused on gate-all-around integrated circuit structures. These patents, titled "Gate-all-around integrated circuit structures having asymmetric source and drain contact structures," detail methods of fabricating such advanced integrated circuits. One notable design features a vertical arrangement of nanowires positioned above a fin, with a gate stack strategically placed above this structure. The innovation includes unique configurations of epitaxial source and drain structures that enhance performance and efficiency.

Additionally, Kobrinsky has contributed to patents addressing integrated circuit structures with partitioned source or drain contact structures. These designs are characterized by a fin-based configuration, where a gate stack is applied over the fin, and where the conductive contact structure is effectively partitioned to optimize performance at either end of the fin.

Career Highlights

Mauro J. Kobrinsky's career at Intel Corporation has been marked by his innovative spirit and technical expertise. He has not only filed a remarkable number of patents but has also contributed to the company’s reputation as a leader in semiconductor technology. His inventions reflect a deep understanding of material science and electronic engineering, driving progress in the industry.

Collaborations

Throughout his career, Kobrinsky has collaborated with talented individuals including Tahir Ghani and Patrick R. Morrow. These partnerships have fostered a synergistic environment where complex problems in circuit design and fabrication can be tackled more effectively. The collective expertise of his colleagues has undoubtedly enriched his innovative endeavors.

Conclusion

Mauro J. Kobrinsky stands out as a leading inventor whose work has significantly influenced the semiconductor field. Through his numerous patents and collaborative efforts at Intel Corporation, he continues to innovate and push the boundaries of what is possible in integrated circuit structures. Kobrinsky's contributions not only reflect his talent as an inventor but also underscore the importance of collaborative innovation in achieving technological advancements.

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