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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12506075 B1

PDFFull Text
Date of Patent:
Dec. 23, 2025

Filed:

Jun. 25, 2021

Epitaxial source/drain back-side device contact structures with wrap around metallization and protective conformal liner

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Mohit Haran, Hillsboro, OR (US);

Charles Wallace, Portland, OR (US);

Leanord Guler, Hillsboro, OR (US);

Sukru Yemenicioglu, Portland, OR (US);

Mauro Kobrinsky, Portland, OR (US);

Tahir Ghani, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Essential Patents Group, LLP

Primary Examiner:

Lex H Malsawma

Assistant Examiner:

Ethan Edward Cutler

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 21/0259 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/01 (2025.01);
Abstract

Back-side transistor contacts that wrap around a portion of source and/or drain semiconductor bodies, related transistor structures, integrated circuits, systems, and methods of fabrication are disclosed. Such back-side transistor contacts are coupled to a top and a side of the source and/or drain semiconductor and extend to back-side interconnects. Coupling to top and side surfaces of the source and/or drain semiconductor reduces contact resistance and extending the metallization along the side reduces transistor cell size for improve device density.

Find Patent Forward Citations

Haran, Mohit. (2025). Epitaxial source/drain back-side device contact structures with wrap around metallization and protective conformal liner (U.S. Patent No. 12506075). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12506075

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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