The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Mar. 31, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Clifford Ong, Portland, OR (US);

Zheng Guo, Portland, OR (US);

Eirc A. Karl, Portland, OR (US);

Smita Shridharan, Beaverton, OR (US);

Mauro J. Kobrinsky, Portland, OR (US);

Shem O. Ogadhoh, Beaverton, OR (US);

Clifford J. Engel, Hillsboro, OR (US);

Charles H. Wallace, Portland, OR (US);

Leonard P. Guler, Hillsboro, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 10/12 (2023.02); H10B 10/125 (2023.02); H10D 84/85 (2025.01); H10D 84/853 (2025.01);
Abstract

Embodiments described herein may be related to apparatuses, processes, systems, and techniques directed to electrical couplings between epitaxial structures and voltage sources within transistors in SRAM bit cells. Embodiments include direct electrical couplings between a backside contact metal (BM0) and a backside of an epitaxial structure to provide SRAM VCC voltage (SVCC) voltage, as well as electrical connection structures that electrically couple the BM0 to a front side of an epitaxial structure to provide SVCC voltage. Other embodiments may be described and/or claimed.


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