The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Jun. 25, 2021
Intel Corporation, Santa Clara, CA (US);
Carl Naylor, Portland, OR (US);
Jasmeet Chawla, Hillsboro, OR (US);
Matthew Metz, Portland, OR (US);
Sean King, Beaverton, OR (US);
Ramanan Chebiam, Hillsboro, OR (US);
Mauro Kobrinsky, Portland, OR (US);
Scott Clendenning, Portland, OR (US);
Sudarat Lee, Hillsboro, OR (US);
Christopher Jezewski, Portland, OR (US);
Sunny Chugh, Hillsboro, OR (US);
Jeffery Bielefeld, Forest Grove, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Integrated circuitry interconnect structures comprising a first metal and a graphene cap over a top surface of the first metal. Within the interconnect structure an amount of a second metal, nitrogen, or silicon is greater proximal to an interface of the graphene cap. The presence of the second metal, nitrogen, or silicon may improve adhesion of the graphene to the first metal and/or otherwise improve electromigration resistance of a graphene capped interconnect structure. The second metal, nitrogen, or silicon may be introduced into the first metal during deposition of the first metal, or during a post-deposition treatment of the first metal. The second metal, nitrogen, or silicon may be introduced prior to, or after, capping the first metal with graphene.