Matthew V Metz

Portland, OR, United States of America

Matthew V Metz

Average Co-Inventor Count = 7.4

ph-index = 31

Forward Citations = 2,800(Granted Patents)

Forward Citations (Not Self Cited) = 2,574(Sep 21, 2024)

DiyaCoin DiyaCoin 3.16 

Inventors with similar research interests:


Location History:

  • Hillsboro, OR (US) (2004 - 2024)
  • Portland, OR (US) (2011 - 2024)


Years Active: 2004-2025

where 'Filed Patents' based on already Granted Patents

302 patents (USPTO):

Title: Matthew V Metz: A Trailblazer in Semiconductor Innovations

Introduction:

In the ever-evolving semiconductor industry, innovators like Matthew V Metz have played a pivotal role in advancing technology and pushing the boundaries of possibility. With an impressive portfolio of patents and a career that includes associations with renowned companies, Metz has undoubtedly left an indelible mark in the field. In this article, we will delve into Metz's latest patents, career highlights, notable collaborations, and his overall contributions to the industry.

Latest Patents:

Matthew V Metz boasts a remarkable number of 267 patents, showcasing his expertise and ongoing commitment to innovation. Let's explore two of his most recent patents:

1. Indium-containing fin of a transistor device with an indium-rich core:

This patent introduces a novel apparatus featuring a transistor device on a circuit substrate. The device includes a body with opposing sidewalls and a channel material that incorporates indium. The base of the channel material exhibits a profile that enhances indium atom diffusivity alterations away from the sidewalls, offering potential advancements in transistor performance.

2. Multilayer high-k gate dielectric for a high-performance logic transistor:

This patent introduces a revolutionary integrated circuit structure incorporating a multilayer high-k gate dielectric stack. The stack comprises two distinct high-k materials, one of which possesses a modified material property, such as ferroelectricity, texture, strain, or lattice constant. This innovation has the potential to enhance transistor functionality, paving the way for more efficient logic transistors.

Career Highlights:

Matthew V Metz's contributions extend beyond his extensive patent portfolio. Notably associated with Intel Corporation, he has been instrumental in driving cutting-edge advancements within the semiconductor industry. Although specific details regarding career accomplishments were not provided, it is safe to surmise that Metz's work has significantly influenced the field.

Collaborations:

Throughout his career, Metz has had the opportunity to collaborate with esteemed peers. Some notable coworkers include Jack T Kavalieros and Robert S Chau. The synergy between these individuals has likely contributed to breakthroughs and advancements in semiconductor technologies.

Conclusion:

Matthew V Metz's journey in the field of semiconductor innovations has been marked by numerous patents and contributions to industry giants such as Intel Corporation. His latest patents in transistor device design and high-k gate dielectric stacks demonstrate his dedication to advancing cutting-edge technology. As Metz's career continues to evolve, it is anticipated that he will persist in making significant contributions to the semiconductor industry, inspiring future inventors and innovators along the way.

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