The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Dec. 23, 2020
Gate dielectrics for complementary metal oxide semiconductors transistors and methods of fabrication
Intel Corporation, Santa Clara, CA (US);
Ashish Verma Penumatcha, Beaverton, OR (US);
Seung Hoon Sung, Portland, OR (US);
Jack Kavalieros, Portland, OR (US);
Uygar Avci, Portland, OR (US);
Tristan Tronic, Aloha, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Devin Merrill, McMinnville, OR (US);
Tobias Brown-Heft, Portland, OR (US);
Kirby Maxey, Hillsboro, OR (US);
Matthew Metz, Portland, OR (US);
Ian Young, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A complementary metal oxide semiconductor (CMOS) transistor includes a first transistor with a first gate dielectric layer above a first channel, where the first gate dielectric layer includes HfZO, where 0.33<x<0.5. The first transistor further includes a first gate electrode on the first gate dielectric layer and a first source region and a first drain region on opposite sides of the first gate electrode. The CMOS transistor further includes a second transistor adjacent to the first transistor. The second transistor includes a second gate dielectric layer above a second channel, where the second gate dielectric layer includes HfZO, where 0.5<x<0.99, a second gate electrode on the second gate dielectric layer and a second source region and a second drain region on opposite sides of the second gate electrode.