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For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Shriram Shivaraman

USPTO Granted Patents = 52 

 

Average Co-Inventor Count = 8.4

ph-index = 3

Forward Citations = 50(Granted Patents)

Forward Citations (Not Self Cited) = 39(Dec 10, 2025)


Company Filing History:

goldMedal52 out of 54,780 
 
Intel Corporation
 patents

Years Active: 2020-2025

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Areas of Expertise:
Transition Metal Dichalcogenides
Thin Film Transistors
Ferroelectric Capacitors
Metal Oxide Contacts
Charge-Trap Layers
Vertical Architecture
Epitaxial Layers
Dual Gate Control
Nanowire Integration
Stacked CMOS
High-K Dielectrics
Memory Cells
52 patents (USPTO):Explore Patents
1. 12396254 - Stacked 2D CMOS with inter metal layers (2025-08-19),
2. 12396217 - Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication (2025-08-19),
3. 12349438 - Contact gating for 2D field effect transistors (2025-07-01),
4. 12349416 - Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures (2025-07-01),
5. 12310101 - Gate dielectrics for complementary metal oxide semiconductors transistors and methods of fabrication (2025-05-20),
6. 12278289 - TMD inverted nanowire integration (2025-04-14),
7. 12266729 - Angled etch to enable tin removal from selected sidewalls (2025-04-01),
8. 12266720 - Transistors with monocrystalline metal chalcogenide channel materials (2025-04-01),
9. 12191395 - Dual gate control for trench shaped thin film transistors (2025-01-07),
10. 12183831 - Self-aligned contacts for thin film transistors (2024-12-31),
11. 12176388 - Transition metal dichalcogenide nanowires and methods of fabrication (2024-12-24),
12. 12166122 - Field-effect transistor (FET) with self-aligned ferroelectric capacitor and methods of fabrication (2024-12-10),
13. 12125895 - Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabrication (2024-10-22),
14. 12119409 - Multi-layer crystalline back gated thin film transistor (2024-10-15),
15. 12048165 - Ferroelectric capacitors and methods of fabrication (2024-07-23),

Title: The Innovative Journey of Shriram Shivaraman

Introduction: Shriram Shivaraman is a renowned inventor based in Hillsboro, Oregon. With a passion for technological advancements, he has made significant contributions to the field of innovation.

Latest Patents: Shriram Shivaraman holds several patents in the areas of semiconductor devices and nanotechnology, showcasing his expertise in cutting-edge technologies.

Career Highlights: Throughout his career, Shriram Shivaraman has worked with leading tech companies, where he has played a key role in developing groundbreaking solutions. His innovative mindset and dedication have led to the successful implementation of various projects.

Collaborations: Shriram Shivaraman has collaborated with top researchers and scientists in the industry, fostering a culture of innovation and knowledge sharing. His collaborative efforts have resulted in the creation of pioneering technologies that have had a lasting impact.

Conclusion: Shriram Shivaraman's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a standout figure in the world of inventors. His work continues to inspire and shape the future of technological advancements.

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