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For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Shriram Shivaraman

This inventor holds 62 USPTO granted patents and 30 published patent applications and 3 EPO patents, primarily in Thin Film Transistors. Top assignee: Intel Corporation. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shriram Shivaraman. Retrieved from https://idiyas.com/inventor/shriram-shivaraman

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 62 

% Patents Active = 87.1

 

Average Co-Inventor Count = 8.2

ph-index = 4

Forward Citations = 61(Granted Patents)

Forward Citations (Not Self Cited) = 39(Dec 10, 2025)


Company Filing History:

goldMedal62 out of 56,322 
 
Intel Corporation
 patents

Years Active: 2020-2026

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Areas of Expertise:
Thin Film Transistors
Ferroelectric Capacitors
TMD Integration
2D CMOS
Vertical Architecture
Charge Trap Layer
Multilayer Dielectrics
Memory Cells
Nanowire Transistors
Epitaxial Layers
Transition Metal Dichalcogenides
62 patents (USPTO):Explore Patents
1. 12757407 - Replacement electrode process for 3D ferroelectric memory (2026-10-06),
2. 12733197 - Back-end-of-line 2D transistor (2026-09-08),
3. 12731626 - Selective ferroelectric deployment for single-transistor, multiple-capacitor devices (2026-09-08),
4. 12720851 - Capacitor structure embedded within source or drain region (2026-08-25),
5. 12720778 - Integrated circuits with high dielectric constant interfacial layering (2026-08-25),
6. 12720760 - Ferroelectric capacitor within backside interconnect (2026-08-25),
7. 12713618 - SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROELECTRIC CAPACITORS (2026-08-18),
8. 12660198 - Ferroelectric three-dimensional memory (2026-06-16),
9. 12628383 - Transistors having stacked 2D material channel layers and heterogeneous 2D material contacts layers epitaxial to the 2D material channel layers (2026-05-12),
10. 12575111 - Back-end-of-line 2D memory cell (2026-03-10),
11. 12396254 - Stacked 2D CMOS with inter metal layers (2025-08-19),
12. 12396217 - Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication (2025-08-19),
13. 12349438 - Contact gating for 2D field effect transistors (2025-07-01),
14. 12349416 - Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures (2025-07-01),
15. 12310101 - Gate dielectrics for complementary metal oxide semiconductors transistors and methods of fabrication (2025-05-20),

Title: The Innovative Journey of Shriram Shivaraman

Introduction: Shriram Shivaraman is a renowned inventor based in Hillsboro, Oregon. With a passion for technological advancements, he has made significant contributions to the field of innovation.

Latest Patents: Shriram Shivaraman holds several patents in the areas of semiconductor devices and nanotechnology, showcasing his expertise in cutting-edge technologies.

Career Highlights: Throughout his career, Shriram Shivaraman has worked with leading tech companies, where he has played a key role in developing groundbreaking solutions. His innovative mindset and dedication have led to the successful implementation of various projects.

Collaborations: Shriram Shivaraman has collaborated with top researchers and scientists in the industry, fostering a culture of innovation and knowledge sharing. His collaborative efforts have resulted in the creation of pioneering technologies that have had a lasting impact.

Conclusion: Shriram Shivaraman's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a standout figure in the world of inventors. His work continues to inspire and shape the future of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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