The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Dec. 23, 2020
Intel Corporation, Santa Clara, CA (US);
Chelsey Dorow, Portland, OR (US);
Kevin O'brien, Portland, OR (US);
Carl Naylor, Portland, OR (US);
Uygar Avci, Portland, OR (US);
Sudarat Lee, Hillsboro, OR (US);
Ashish Verma Penumatcha, Beaverton, OR (US);
Chia-Ching Lin, Portland, OR (US);
Tanay Gosavi, Portland, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Kirby Maxey, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A transistor includes a channel layer including a transition metal dichalcogenide (TMD) material, an encapsulation layer on a first portion of the channel layer, a gate electrode above the encapsulation layer, a gate dielectric layer between the gate electrode and the encapsulation layer. The transistor further includes a source contact on a second portion of the channel layer and a drain contact on a third portion of the channel layer, where the gate structure is between drain contact and the source contact.