Portland, OR, United States of America

Chelsey Dorow

This inventor holds 22 USPTO granted patents and 34 published patent applications and 2 EPO patents. Top assignee: Intel Corporation. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chelsey Dorow. Retrieved from https://idiyas.com/inventor/chelsey-dorow

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 63.6

 

Average Co-Inventor Count = 9.6

ph-index = 1


Company Filing History:


Years Active: 2024-2026

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22 patents (USPTO):Explore Patents

Title: **Innovator Spotlight: Chelsey Dorow**

Introduction

Chelsey Dorow is an accomplished inventor based in Portland, Oregon, known for her significant contributions to the field of transistor technology. With a remarkable portfolio of six patents, Dorow has established herself as a prominent figure within Intel Corporation, where she continues to innovate and push the boundaries of what is possible in semiconductor technology.

Latest Patents

Dorow's recent patents showcase her expertise in developing advanced transistor structures. One of her notable inventions involves "transistors with monocrystalline metal chalcogenide channel materials." This innovative approach involves forming transistor structures from template regions patterned over a substrate, allowing for the preferential growth of metal chalcogenide crystals. These crystals are then meticulously patterned into the channel regions of transistors, demonstrating a sophisticated methodology that leverages nanometer-dimensioned patterning techniques.

Another significant patent is centered around "transition metal dichalcogenide nanosheet transistors and methods of fabrication." This invention outlines a unique transistor design that incorporates a layered structure with a first and second channel layer made from monocrystalline transition metal dichalcogenides. The design includes source and drain structures, a gate structure, and various additional components, all engineered to enhance performance and efficiency in electronic devices.

Career Highlights

As a key member of Intel Corporation, Chelsey Dorow has played a vital role in advancing semiconductor technology. Her acumen in developing cutting-edge solutions has not only contributed to the company’s innovation strategy but has also positioned her at the forefront of research and development in the industry. Dorow’s work continues to pave the way for next-generation electronic applications.

Collaborations

Throughout her career, Dorow has collaborated with esteemed colleagues, including Kirby Maxey and Shriram Shivaraman. These partnerships reflect a collaborative spirit within the tech industry, where collective expertise is harnessed to drive groundbreaking innovations in semiconductor design and fabrication.

Conclusion

Chelsey Dorow's contributions to the field of inventions, particularly in transistor technology, highlight her role as a significant innovator at Intel Corporation. Her latest patents underline her commitment to advancing the frontiers of technology, making her an inspiring figure for future generations of engineers and inventors. As she continues to grow her portfolio, the tech community eagerly anticipates her next groundbreaking innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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