The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Dec. 29, 2022
Intel Corporation, Santa Clara, CA (US);
Chelsey Dorow, Portland, OR (US);
Carl H. Naylor, Portland, OR (US);
Kirby Maxey, Hillsboro, OR (US);
Kevin O'brien, Portland, OR (US);
Ashish Verma Penumatcha, Beaverton, OR (US);
Chia-Ching Lin, Portland, OR (US);
Uygar Avci, Portland, OR (US);
Matthew Metz, Portland, OR (US);
Sudarat Lee, Hillsboro, OR (US);
Ande Kitamura, Portland, OR (US);
Scott B. Clendenning, Portland, OR (US);
Mahmut Sami Kavrik, Eugene, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A transistor has multiple channel regions coupling source and drain structures, and a seed material is between one of the source or drain structures and a channel material, which includes a metal and a chalcogen. Each channel region may include a nanoribbon. A nanoribbon may have a monocrystalline structure and a thickness of a monolayer, less than 1 nm. A nanoribbon may be free of internal grain boundaries. A nanoribbon may have an internal grain boundary adjacent an end opposite the seed material. The seed material may directly contact the first of the source or drain structures, and the channel material may directly contact the second of the source or drain structures.