The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Dec. 29, 2022
Intel Corporation, Santa Clara, CA (US);
Kevin P. O'brien, Portland, OR (US);
Rachel Steinhardt, Beaverton, OR (US);
Chelsey Dorow, Portland, OR (US);
Carl H. Naylor, Portland, OR (US);
Kirby Maxey, Hillsboro, OR (US);
Sudarat Lee, Hillsboro, OR (US);
Ashish Verma Penumatcha, Beaverton, OR (US);
Uygar Avci, Portland, OR (US);
Scott Clendenning, Portland, OR (US);
Tristan Tronic, Aloha, OR (US);
Mahmut Sami Kavrik, Eugene, OR (US);
Ande Kitamura, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having a doping layer on metal chalcogenide nanoribbons outside of the channel region. The doping layer is a metal oxide that shifts the electrical characteristics of the nanoribbons and is formed by depositing a metal and oxidizing the metal by exposure to ozone and ultraviolet light.