Growing community of inventors

Portland, OR, United States of America

Chelsey Dorow

Average Co-Inventor Count = 9.48

ph-index = 1

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 0

Chelsey DorowUygar E Avci (11 patents)Chelsey DorowKirby Maxey (11 patents)Chelsey DorowCarl H Naylor (10 patents)Chelsey DorowShriram Shivaraman (9 patents)Chelsey DorowSudarat Lee (9 patents)Chelsey DorowChia-Ching Lin (8 patents)Chelsey DorowAshish Verma Penumatcha (8 patents)Chelsey DorowTanay Gosavi (7 patents)Chelsey DorowKevin P O'brien (7 patents)Chelsey DorowKevin O'Brien (6 patents)Chelsey DorowMatthew V Metz (2 patents)Chelsey DorowSeung Hoon Sung (2 patents)Chelsey DorowTristan A Tronic (1 patent)Chelsey DorowPatrick Theofanis (1 patent)Chelsey DorowChelsey Dorow (13 patents)Uygar E AvciUygar E Avci (122 patents)Kirby MaxeyKirby Maxey (13 patents)Carl H NaylorCarl H Naylor (30 patents)Shriram ShivaramanShriram Shivaraman (51 patents)Sudarat LeeSudarat Lee (11 patents)Chia-Ching LinChia-Ching Lin (52 patents)Ashish Verma PenumatchaAshish Verma Penumatcha (35 patents)Tanay GosaviTanay Gosavi (142 patents)Kevin P O'brienKevin P O'brien (13 patents)Kevin O'BrienKevin O'Brien (95 patents)Matthew V MetzMatthew V Metz (302 patents)Seung Hoon SungSeung Hoon Sung (143 patents)Tristan A TronicTristan A Tronic (27 patents)Patrick TheofanisPatrick Theofanis (6 patents)
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Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. Intel Corporation (12 from 54,155 patents)


13 patents:

1. 12396217 - Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication

2. 12396254 - Stacked 2D CMOS with inter metal layers

3. 12369382 - Integrated circuit structures with graphene contacts

4. 12349438 - Contact gating for 2D field effect transistors

5. 12349442 - Thin film transistors having semiconductor structures integrated with 2D channel materials

6. 12324204 - Transistors including two-dimensional materials

7. 12278289 - TMD inverted nanowire integration

8. 12266720 - Transistors with monocrystalline metal chalcogenide channel materials

9. 12266712 - Transition metal dichalcogenide nanosheet transistors and methods of fabrication

10. 12176388 - Transition metal dichalcogenide nanowires and methods of fabrication

11. 12125895 - Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabrication

12. 11935956 - TMD inverted nanowire integration

13. 11908950 - Charge-transfer spacers for stacked nanoribbon 2D transistors

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