The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Jun. 28, 2022
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Chelsey Dorow, Portland, OR (US);
Sudarat Lee, Hillsboro, OR (US);
Kevin P. O'brien, Portland, OR (US);
Ande Kitamura, Portland, OR (US);
Ashish Verma Penumatcha, Beaverton, OR (US);
Carl H. Naylor, Portland, OR (US);
Kirby Maxey, Hillsboro, OR (US);
Scott B. Clendenning, Portland, OR (US);
Uygar E. Avci, Portland, OR (US);
Chia-Ching Lin, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/47 (2025.01); H10D 30/67 (2025.01); H10D 62/84 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/47 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/84 (2025.01);
Abstract
Embodiments disclosed herein include transistor devices. In an embodiment, the transistor comprises a transition metal dichalcogenide (TMD) channel. In an embodiment, a two dimensional (2D) dielectric is over the TMD channel. In an embodiment, a gate metal is over the 2D dielectric.