The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Dec. 04, 2023
Intel Corporation, Santa Clara, CA (US);
Gilbert Dewey, Hillsboro, OR (US);
Abhishek Sharma, Hillsboro, OR (US);
Van Le, Beaverton, OR (US);
Jack Kavalieros, Portland, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Seung Hoon Sung, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Arnab Sen Gupta, Beaverton, OR (US);
Nazila Haratipour, Hillsboro, OR (US);
Justin Weber, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Transistor structures may include a metal oxide contact buffer between a portion of a channel material and source or drain contact metallization. The contact buffer may improve control of transistor channel length by limiting reaction between contact metallization and the channel material. The channel material may be of a first composition and the contact buffer may be of a second composition.