Hillsboro, OR, United States of America

Abhishek Sharma

This inventor holds 17 USPTO granted patents and 4 EPO patents, primarily in Low Temperature Memory. Top assignee: Intel Corporation. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Abhishek Sharma. Retrieved from https://idiyas.com/inventor/abhishek-sharma-d329ey8o

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.8

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2023-2026

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Areas of Expertise:
Dynamic Random Access Memory
Transistor Structures
Epitaxial Structures
Signal Conversion
Stacked Semiconductor
Thin-Film Transistors
Electrostatic Discharge Diode
Vertical MIM Capacitor
17 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Abhishek Sharma

Introduction

Abhishek Sharma is a prominent inventor based in Hillsboro, Oregon. With five patents to his name, he has made significant contributions to the field of semiconductor technology, enhancing the efficiency and functionality of electronic devices. His work at Intel Corporation positions him at the forefront of innovation in the tech industry.

Latest Patents

Abhishek Sharma's recent patents include groundbreaking advancements in transistor structures and memory cell configurations. One of his notable inventions involves transistor structures equipped with a metal oxide contact buffer. This innovation serves to improve control over transistor channel length by minimizing the reaction between contact metallization and the channel material. This design addresses the challenges of utilizing different compositions for the channel and the contact buffer, potentially leading to better performance in electronic applications.

Another remarkable patent focuses on a three-dimensional (3D) 1T1C stacked DRAM structure, which features a novel method of fabricating memory cells. This memory device consists of a substrate surface with a 3D array of memory cells, each comprising a transistor and a capacitor. The structure enhances integration density and improves the overall efficiency of memory devices, indicating a significant leap in memory technology.

Career Highlights

Abhishek has had a successful career at Intel Corporation, where he continues to push the boundaries of semiconductor technology. His expertise in advanced materials and device fabrication plays a crucial role in developing innovative solutions that meet the evolving demands of the electronics market.

Collaborations

Throughout his career, Abhishek has collaborated with talented colleagues, including Tahir Ghani and Travis Lajoie. These partnerships enable the sharing of knowledge and resources, fostering a creative environment that leads to breakthrough inventions in the semiconductor field.

Conclusion

Abhishek Sharma's contributions to the field of semiconductors through his inventive patents at Intel Corporation showcase his dedication to innovation and technology advancement. His work not only enhances the functionality of electronic devices but also opens new avenues for future research and development in the industry. As he continues to innovate, Abhishek Sharma remains a key figure in the semiconductor landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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