Hillsboro, OR, United States of America

Arnab Sen Gupta

This inventor holds 25 USPTO granted patents and 42 published patent applications and 1 EPO patent, primarily in Thin Film Transistors. Top assignees: Intel Corporation, Intel Coporation, Intel Corporatiion. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Arnab Sen Gupta. Retrieved from https://idiyas.com/inventor/arnab-sen-gupta

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 25 

% Patents Active = 96.0

 

Average Co-Inventor Count = 10.2

ph-index = 2

Forward Citations = 14(Granted Patents)


Location History:

  • Hillsboro, OR (US) (2022 - 2023)
  • Beaverton, OR (US) (2021 - 2024)

Company Filing History:


Years Active: 2021-2026

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Areas of Expertise:
Low-Resistance Contacts
Thermally Stable Contacts
Capacitor Devices
High-k Dielectrics
Schottky Diode Engineering
Acoustic Resonators
Passivation Layers
Monolithic Memory
Vertical Transistors
Epitaxial Layers
Electric Fields
Memory Applications
25 patents (USPTO):Explore Patents

Title: Innovator Arnab Sen Gupta: Pioneering Advancement in Transistor Technology

Introduction: Arnab Sen Gupta, a prolific inventor based in Hillsboro, Oregon, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 15 patents, his innovations primarily focus on enhancing transistor structures and electrostatic discharge (ESD) protection mechanisms.

Latest Patents: Arnab's latest patents demonstrate his cutting-edge work in transistor technology. One of his notable inventions involves "Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures." This innovative design includes a metal oxide contact buffer that is strategically placed between the channel material and the source or drain contact metallization. This buffer aims to improve control of the transistor channel length and minimize unwanted reactions between the contact metallization and the channel material.

Another significant patent pertains to "ESD protection decoupled from diffusion." This patent outlines a semiconductor device that features ESD protection specifically designed for its transistor components. This device comprises a semiconductor substrate with a transistor situated on it, alongside a stack of routing layers, which include a diode configured to provide essential ESD protection, ensuring enhanced reliability and performance of the integrated circuit.

Career Highlights: Arnab Sen Gupta has built an impressive career working at leading technology companies, most notably at Intel Corporation. His role in these organizations highlights his expertise in semiconductor design and innovation, which has contributed to advancements across various applications in electronics.

Collaborations: Throughout his career, Arnab has collaborated with esteemed colleagues, including Van H Le and Abhishek A Sharma. These partnerships have bolstered his research efforts and led to the successful development of groundbreaking semiconductor technologies that influence the industry.

Conclusion: Arnab Sen Gupta stands as a notable inventor in the semiconductor field, with his work significantly shaping the future of transistor technology. His innovative patents and collaboration with industry professionals underscore his commitment to enhancing electronic devices' performance and reliability. As he continues to push the boundaries of innovation, Arnab remains an influential figure in the realm of semiconductor advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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