The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Dec. 09, 2020
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Sou-Chi Chang, Portland, OR (US);

Chia-Ching Lin, Portland, OR (US);

Kaan Oguz, Portland, OR (US);

I-Cheng Tung, Hillsboro, OR (US);

Uygar E. Avci, Portland, OR (US);

Matthew V. Metz, Portland, OR (US);

Ashish Verma Penumatcha, Beaverton, OR (US);

Ian A. Young, Portland, OR (US);

Arnab Sen Gupta, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 23/5223 (2013.01); H01L 28/65 (2013.01); H01L 28/75 (2013.01); H01L 28/55 (2013.01);
Abstract

Disclosed herein are capacitors including built-in electric fields, as well as related devices and assemblies. In some embodiments, a capacitor may include a top electrode region, a bottom electrode region, and a dielectric region between and in contact with the top electrode region and the bottom electrode region, wherein the dielectric region includes a perovskite material, and the top electrode region has a different material structure than the bottom electrode region.


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