Kaan Oguz

This inventor holds 104 USPTO granted patents and 21 published patent applications and 5 EPO patents, primarily in Spin Orbit Memory (CPC class H01L43-10). Top assignees: Intel Corporation, Intel Coporation. Active years: 2014-2026.

USPTO Granted Patents = 104 (Patent Applications = 21)

% Patents Active = 80.8

EPO Patents = 5 (Patent Applications = 39)

Average Co-Inventor Count = 7.3

ph-index = 6

Forward Citations = 231(Granted Patents)

Forward Citations (Not Self Cited) = 197(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Dublin 2, IE (2014)
Dublin, IE (2014 - 2018)
Hillsboro, OR (US) (2017 - 2020)
Beaverton, OR (US) (2016 - 2023)
Portland, OR (US) (2019 - 2024)

Company Filing History:

Years Active: 2014-2026

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Areas of Expertise:

Spin Orbit Memory

Magnetic Memory

High-k Dielectrics

Ferroelectric Transistors

Magnetic Tunnel Junction

Capacitors

Electrical Conductive Layers

Perovskite Capacitors

Transition Metal Dichalcogenides

Magnetoelectric Devices

Memory Stacks

ESD Protection

104 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12641804 - Capacitor devices with strontium titanate insulator layers (2026-05-26),

2. 12616021 - Metal insulator metal (MIM) capacitor architectures (2026-04-28),

3. 12615967 - Magnetoelectric logic with magnetic tunnel junctions (2026-04-28),

4. 12610584 - Selective growth of high-k oxide on channel of gate-all-around transistors (2026-04-21),

5. 12575165 - Transistor devices with high-k perovskite gate dielectrics (2026-03-10),

6. 12501628 - Memory comprising conductive ferroelectric material in series with dielectric material (2025-12-16),

7. 12495559 - Capacitor with dual dielectric layers (2025-12-09),

8. 12484457 - Differentially programmable magnetic tunnel junction device and system including same (2025-11-25),

9. 12437929 - Capacitor with an electrically conductive layer coupled with a metal layer of the capacitor (2025-10-07),

10. 12432948 - Compositional engineering of Schottky diode (2025-09-30),

11. 12328946 - ESD protection decoupled from diffusion (2025-06-10),

12. 12255225 - Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes (2025-03-18),

13. 12224309 - Capacitors with built-in electric fields (2025-02-11),

14. 12100731 - Crystalline bottom electrode for perovskite capacitors and methods of fabrication (2024-09-24),

15. 12058847 - Monolithic memory stack (2024-08-06),

Title: The Innovative Journey of Kaan Oguz

Introduction: Kaan Oguz, a talented inventor based in Beaverton, Oregon, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Kaan Oguz holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to innovation and sustainability.

Career Highlights: With a background in engineering and a passion for problem-solving, Kaan Oguz has successfully developed cutting-edge solutions that have revolutionized various industries. His work has been recognized for its ingenuity and practicality.

Collaborations: Throughout his career, Kaan Oguz has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work in multidisciplinary teams has led to the successful implementation of his ideas.

Conclusion: Kaan Oguz's dedication to innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His contributions continue to inspire future generations of innovators to push the boundaries of what is possible.