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For the Inventor, By the Inventor

Beaverton, OR, United States of America

Kaan Oguz

USPTO Granted Patents = 99 

 

Average Co-Inventor Count = 7.3

ph-index = 6

Forward Citations = 222(Granted Patents)

Forward Citations (Not Self Cited) = 197(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Dublin 2, IE (2014)
  • Dublin, IE (2014 - 2018)
  • Hillsboro, OR (US) (2017 - 2020)
  • Beaverton, OR (US) (2016 - 2023)
  • Portland, OR (US) (2019 - 2024)

Company Filing History:

goldMedal99 out of 54,750 
 
Intel Corporation
 patents

Years Active: 2014-2025

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Areas of Expertise:
Magnetic Tunnel Junctions
Spin Orbit Torque Memory
Ferroelectric Field Effect Transistors
Transition Metal Dichalcogenides
Magnetoelectric Memory Devices
Thin Film Capacitors
Schottky Diodes
Nano-Rod Spin Orbit Coupling
Signal Boosting in Spin Logic
Perpendicular Spin Transfer Torque
Multilayer Magnetic Structures
ESD Protection Techniques
99 patents (USPTO):Explore Patents
1. 12501628 - Memory comprising conductive ferroelectric material in series with dielectric material (2025-12-16),
2. 12495559 - Capacitor with dual dielectric layers (2025-12-09),
3. 12484457 - Differentially programmable magnetic tunnel junction device and system including same (2025-11-25),
4. 12437929 - Capacitor with an electrically conductive layer coupled with a metal layer of the capacitor (2025-10-07),
5. 12432948 - Compositional engineering of Schottky diode (2025-09-30),
6. 12328946 - ESD protection decoupled from diffusion (2025-06-10),
7. 12255225 - Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes (2025-03-18),
8. 12224309 - Capacitors with built-in electric fields (2025-02-11),
9. 12100731 - Crystalline bottom electrode for perovskite capacitors and methods of fabrication (2024-09-24),
10. 12058847 - Monolithic memory stack (2024-08-06),
11. 12009018 - Transition metal dichalcogenide based spin orbit torque memory device (2024-06-11),
12. 11818963 - Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy (2023-11-14),
13. 11696514 - Transition metal dichalcogenide based magnetoelectric memory device (2023-07-04),
14. 11683939 - Spin orbit memory devices with dual electrodes, and methods of fabrication (2023-06-20),
15. 11640995 - Ferroelectric field effect transistors (FeFETs) having band-engineered interface layer (2023-05-02),

Title: The Innovative Journey of Kaan Oguz

Introduction: Kaan Oguz, a talented inventor based in Beaverton, Oregon, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Kaan Oguz holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to innovation and sustainability.

Career Highlights: With a background in engineering and a passion for problem-solving, Kaan Oguz has successfully developed cutting-edge solutions that have revolutionized various industries. His work has been recognized for its ingenuity and practicality.

Collaborations: Throughout his career, Kaan Oguz has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work in multidisciplinary teams has led to the successful implementation of his ideas.

Conclusion: Kaan Oguz's dedication to innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His contributions continue to inspire future generations of innovators to push the boundaries of what is possible.

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