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For the Inventor, By the Inventor

Yokohama, Japan

Toshihiko Nagase

This inventor holds 120 USPTO granted patents and 7 published patent applications, primarily in Magnetic Memory Devices (CPC class H01L43-08). Top assignees: Kabushiki Kaisha Toshiba, Toshiba Memory Corporation, Skhynix Inc.. Active years: 2001-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshihiko Nagase. Retrieved from https://idiyas.com/inventor/toshihiko-nagase

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 120 

% Patents Active = 90.0

Average Co-Inventor Count = 5.1

ph-index = 17

Forward Citations = 1,203(Granted Patents)

Forward Citations (Not Self Cited) = 995(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Tokyo-To, JP (2001 - 2003)
  • Kangawa-ken, JP (2004)
  • Kawasaki, JP (2004 - 2007)
  • Shibuya-ku, JP (2008)
  • Kanagawa-ken, JP (2008)
  • Sagamihara, JP (2005 - 2013)
  • Yokohama, JP (2012 - 2017)
  • Seoul, KR (2015 - 2021)
  • Shibuya Tokyo, JP (2021)
  • Kuwana Mie, JP (2020 - 2022)
  • Tokyo, JP (2001 - 2023)
  • Saitama Saitama, JP (2022 - 2023)
  • Saitama, JP (2024)

Company Filing History:

goldMedal77 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal27 out of 2,955 
 
Toshiba Memory Corporation
 patents
bronzeMedal9 out of 11,659 
 
Skhynix Inc.
 patents
4. 6 out of 3,189 
 
Kioxia Corporation
 patents
5. 2 out of 1,765 
 
National Institute of Advanced Industrial Science and Technology
 patents
6. 1 out of 1,051 
 
Tohoku University
 patents
7. 10 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 2001-2024

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Areas of Expertise:
Magnetic Memory Device
Magnetoresistive Element
Semiconductor Device
Nonvolatile Storage Device
Magnetic Storage Device
Film Forming Apparatus
Variable Resistance Element
Magnetoresistive Memory
Electronic Device
Manufacturing Method
Selector Device
Magnetic Device
120 patents (USPTO):Explore Patents
1. 12133394 - Magnetic memory device (2024-10-29),
2. 12065725 - Film forming apparatus and film forming method (2024-08-20),
3. 11758739 - Magnetic memory device (2023-09-12),
4. 11600773 - Selector and non-volatile storage device (2023-03-07),
5. 11462680 - Magnetic storage device (2022-10-04),
6. 11424290 - Variable resistance element (2022-08-23),
7. 11201189 - Semiconductor device having rare earth oxide layer and method of manufacturing the same (2021-12-14),
8. 11094743 - Magnetic memory device (2021-08-17),
9. 10985210 - Nonvolatile storage device (2021-04-20),
10. 10964884 - Magnetic memory device having an incline side surface (2021-03-30),
11. 10964883 - Magnetic storage device (2021-03-30),
12. 10910032 - Magnetoresistive memory device with different write pulse patterns (2021-02-02),
13. 10873021 - Magnetic device and manufacturing method of magnetic device (2020-12-22),
14. 10854252 - Magnetic storage device with a stack of magnetic layers including iron (Fe) and cobalt (co) (2020-12-01),
15. 10707269 - Semiconductor storage device (2020-07-07),

Title: The Innovations of Toshihiko Nagase: Pioneering Magnetic Memory Devices and Non-Volatile Storage Solutions

Introduction: Toshihiko Nagase, a renowned inventor based in Yokohama, Japan, has made significant contributions to the field of technology with a remarkable 118 patents under his belt. His cutting-edge work in developing magnetic memory devices and non-volatile storage solutions has revolutionized the industry.

Latest Patents: Nagase's latest patents showcase his expertise in magnetic memory devices and non-volatile storage. One of his innovations includes a magnetic memory device that features a unique stacked structure with varying iron concentrations in different magnetic layers, enhancing performance and reliability. Another patent highlights his invention of a selector with a specialized SiTeN compound, optimizing the efficiency and functionality of non-volatile storage devices.

Career Highlights: Throughout his career, Nagase has been associated with leading technology companies such as Toshiba Corporation and Toshiba Memory Corporation. His invaluable contributions have propelled these organizations to the forefront of innovation in the tech sector, solidifying his reputation as a trailblazer in the field.

Collaborations: Nagase's collaborative spirit is evident in his work with esteemed colleagues like Daisuke Watanabe and Tadashi Kai. Together, they have synergized their expertise to drive forward groundbreaking research and development in the realm of semiconductor technology and storage solutions.

Conclusion: Toshihiko Nagase stands as a beacon of innovation, with his pioneering inventions reshaping the landscape of magnetic memory devices and non-volatile storage technologies. His relentless pursuit of excellence and collaborative mindset have set him apart as a visionary inventor in the fast-evolving world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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