The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
May. 01, 2019
Toshiba Memory Corporation, Tokyo, JP;
Tatsuya Kishi, Seongnam-si, KR;
Tsuneo Inaba, Kanagawa, JP;
Daisuke Watanabe, Seoul, KR;
Masahiko Nakayama, Kanagawa, JP;
Nobuyuki Ogata, Kanagawa, JP;
Masaru Toko, Seoul, KR;
Hisanori Aikawa, Seoul, KR;
Jyunichi Ozeki, Seoul, KR;
Toshihiko Nagase, Seoul, KR;
Young Min Eeh, Seongnam-si, KR;
Kazuya Sawada, Seoul, KR;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A memory device includes a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers. The memory device also includes a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a write current to the magnetoresistive element. A first write current in the first writing includes a first pulse and a second pulse added to the first pulse. A width of the second pulse is smaller than a width of the first pulse, and a current level of the second pulse is different from a current level of the first pulse.