Seongnam-si, South Korea

Young Min Eeh

USPTO Granted Patents = 18 

Average Co-Inventor Count = 6.5

ph-index = 6

Forward Citations = 78(Granted Patents)


Location History:

  • Seongnam-si Gyeonggi-do, KR (2020)
  • Seongnam-si, KR (2019 - 2024)

Company Filing History:


Years Active: 2019-2025

where 'Filed Patents' based on already Granted Patents

18 patents (USPTO):

Title: Young Min Eeh: A Pioneer in Magnetoresistance Memory Devices

Introduction

Young Min Eeh, based in Seongnam-si, South Korea, has made significant contributions to the field of memory technologies with an impressive portfolio of 18 patents. His innovative work primarily focuses on magnetoresistance memory devices, which hold promise for the future of data storage solutions.

Latest Patents

Among his latest patents, Eeh has developed advanced magnetoresistance memory devices that consist of multiple ferromagnetic layers, including first, second, third, and fourth layers, along with ferromagnetic oxide layers and insulating materials. One notable invention details a device where the structure is designed to enhance performance through intricate composition involving iron, cobalt, and elements from certain specific groups. Another patent illustrates a similar device but emphasizes different configurations of insulating and ferromagnetic layers to optimize memory capabilities. These inventions reflect Eeh’s deep understanding of materials science and its application in memory technology.

Career Highlights

Young Min Eeh has built an impressive career, having worked with leading organizations such as Toshiba Memory Corporation and Kioxia Corporation. His roles in these companies have enabled him to leverage his expertise in developing cutting-edge memory solutions. Eeh's extensive experience contributes to the advancement of technologies that are critical for modern electronics.

Collaborations

Throughout his career, Young Min Eeh has collaborated with notable professionals in the field, including Kazuya Sawada and Tadaaki Oikawa. These partnerships have fostered innovation and enabled the exchange of ideas, propelling the development of advanced memory technologies.

Conclusion

Young Min Eeh’s contributions to the field of magnetoresistance memory devices demonstrate his commitment to advancing technology. With 18 patents to his name, his work continues to push the boundaries of what is possible in data storage solutions, making him a key figure in the ongoing evolution of memory technology.

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